PR3001G-T
  • Share:

Diodes Incorporated PR3001G-T

Manufacturer No:
PR3001G-T
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
PR3001G-T Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 50V 3A DO201AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):50 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:1.3 V @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):150 ns
Current - Reverse Leakage @ Vr:5 µA @ 50 V
Capacitance @ Vr, F:50pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-201AD, Axial
Supplier Device Package:DO-201AD
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

-
428

Please send RFQ , we will respond immediately.

Similar Products

Part Number PR3001G-T PR3002G-T   PR3003G-T   PR3004G-T   PR3005G-T   PR3006G-T   PR3007G-T   PR1001G-T   PR2001G-T   PR3001-T  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Active Obsolete Obsolete
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 50 V 100 V 200 V 400 V 600 V 800 V 1000 V 50 V 50 V 50 V
Current - Average Rectified (Io) 3A 3A 3A 3A 3A 3A 3A 1A 2A 3A
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 3 A 1.3 V @ 3 A 1.3 V @ 3 A 1.3 V @ 3 A 1.3 V @ 3 A 1.3 V @ 3 A 1.3 V @ 3 A 1.3 V @ 1 A 1.3 V @ 2 A 1.2 V @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 150 ns 150 ns 150 ns 250 ns 250 ns 500 ns 500 ns 150 ns 150 ns 150 ns
Current - Reverse Leakage @ Vr 5 µA @ 50 V 5 µA @ 100 V 5 µA @ 200 V 5 µA @ 400 V 5 µA @ 600 V 5 µA @ 800 V 5 µA @ 1000 V 5 µA @ 50 V 5 µA @ 50 V 5 µA @ 50 V
Capacitance @ Vr, F 50pF @ 4V, 1MHz 50pF @ 4V, 1MHz 50pF @ 4V, 1MHz 50pF @ 4V, 1MHz 50pF @ 4V, 1MHz 50pF @ 4V, 1MHz 50pF @ 4V, 1MHz 15pF @ 4V, 1MHz 35pF @ 4V, 1MHz 50pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-204AL, DO-41, Axial DO-204AC, DO-15, Axial DO-201AD, Axial
Supplier Device Package DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-41 DO-15 DO-201AD
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C

Related Product By Categories

EGL34G-E3/83
EGL34G-E3/83
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 500MA DO213
VS-ETL0806FP-M3
VS-ETL0806FP-M3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 8A TO220-2
S5GHM3/57T
S5GHM3/57T
Vishay General Semiconductor - Diodes Division
DIODE GP 400V 5A DO214AB
SS2003M-TL-E
SS2003M-TL-E
onsemi
DIODE SCHOTTKY 30V 2A 6MCPH
VT1045BP-M3/4W
VT1045BP-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 45V 10A TO220AC
AR3PDHM3_A/I
AR3PDHM3_A/I
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 200V 1.8A TO277A
DL4001-13-F
DL4001-13-F
Diodes Incorporated
DIODE GEN PURP 50V 1A MELF
MBRB1060HE3/45
MBRB1060HE3/45
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 10A TO263AB
MI3045S-E3/4W
MI3045S-E3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 45V 30A TO220AB
VS-8TQ100GPBF
VS-8TQ100GPBF
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 8A TO-220AC
MBRS3201PT3G
MBRS3201PT3G
onsemi
DIODE GEN PURP 200V 3A SMC
RS3K R7G
RS3K R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 3A DO214AB

Related Product By Brand

DM5W30A-13
DM5W30A-13
Diodes Incorporated
TVS DIODE 30VWM 48.4VC DO218
FH3740013Z
FH3740013Z
Diodes Incorporated
CRYSTAL 37.4000MHZ 8PF SMD
FL1470023
FL1470023
Diodes Incorporated
CRYSTAL 14.7000MHZ SURFACE MOUNT
FL2700144
FL2700144
Diodes Incorporated
CRYSTAL 27.0000MHZ 10PF SMD
FL4000010A
FL4000010A
Diodes Incorporated
CRYSTAL SURFACE MOUNT
BAS40W-04-7-F
BAS40W-04-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT323
MMBZ5243B-7-F
MMBZ5243B-7-F
Diodes Incorporated
DIODE ZENER 13V 350MW SOT23-3
FMMT722TC
FMMT722TC
Diodes Incorporated
TRANS PNP 70V 1.5A SOT23-3
PI6C49X0202WIEX
PI6C49X0202WIEX
Diodes Incorporated
IC CLK BUFFER 1:2 8SOIC
PI3LVD512ZFEX
PI3LVD512ZFEX
Diodes Incorporated
IC MUX/DEMUX 5 X 4:2 56TQFN
AP7315D-18FS4-7B
AP7315D-18FS4-7B
Diodes Incorporated
IC REG LINEAR 1.8V 150MA 4DFN
AH1803-WG-7
AH1803-WG-7
Diodes Incorporated
MAGNETIC SWITCH OMNIPOL SC59-3