PR2004G-T
  • Share:

Diodes Incorporated PR2004G-T

Manufacturer No:
PR2004G-T
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
PR2004G-T Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 400V 2A DO15
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:1.3 V @ 2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):150 ns
Current - Reverse Leakage @ Vr:5 µA @ 400 V
Capacitance @ Vr, F:35pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AC, DO-15, Axial
Supplier Device Package:DO-15
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

-
251

Please send RFQ , we will respond immediately.

Similar Products

Part Number PR2004G-T PR2005G-T   PR2006G-T   PR2007G-T   PR3004G-T   PR1004G-T   PR2001G-T   PR2002G-T   PR2003G-T   PR2004-T  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Active Obsolete Obsolete Obsolete Obsolete
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 400 V 600 V 800 V 1000 V 400 V 400 V 50 V 100 V 200 V 400 V
Current - Average Rectified (Io) 2A 2A 2A 2A 3A 1A 2A 2A 2A 2A
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 2 A 1.3 V @ 2 A 1.3 V @ 2 A 1.3 V @ 2 A 1.3 V @ 3 A 1.3 V @ 1 A 1.3 V @ 2 A 1.3 V @ 2 A 1.3 V @ 2 A 1.2 V @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 150 ns 250 ns 500 ns 500 ns 250 ns 150 ns 150 ns 150 ns 150 ns 150 ns
Current - Reverse Leakage @ Vr 5 µA @ 400 V 5 µA @ 600 V 5 µA @ 800 V 5 µA @ 1000 V 5 µA @ 400 V 5 µA @ 400 V 5 µA @ 50 V 5 µA @ 100 V 5 µA @ 200 V 5 µA @ 400 V
Capacitance @ Vr, F 35pF @ 4V, 1MHz 35pF @ 4V, 1MHz 35pF @ 4V, 1MHz 35pF @ 4V, 1MHz 50pF @ 4V, 1MHz 15pF @ 4V, 1MHz 35pF @ 4V, 1MHz 35pF @ 4V, 1MHz 35pF @ 4V, 1MHz 35pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AC, DO-15, Axial DO-204AC, DO-15, Axial DO-204AC, DO-15, Axial DO-204AC, DO-15, Axial DO-201AD, Axial DO-204AL, DO-41, Axial DO-204AC, DO-15, Axial DO-204AC, DO-15, Axial DO-204AC, DO-15, Axial DO-204AC, DO-15, Axial
Supplier Device Package DO-15 DO-15 DO-15 DO-15 DO-201AD DO-41 DO-15 DO-15 DO-15 DO-15
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C

Related Product By Categories

BYW36-TAP
BYW36-TAP
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 600V 2A SOD57
ACDBQC54-HF
ACDBQC54-HF
Comchip Technology
AUTOMOTIVE DIODE SCHOTTKY 30V 20
US1G R3G
US1G R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO214AC
SDM100K30L-7
SDM100K30L-7
Diodes Incorporated
DIODE SCHOTTKY 30V 1A SOD323
DFLS130LQ-7
DFLS130LQ-7
Diodes Incorporated
DIODE SCHOTTKY 30V 1A POWERDI123
PR1005-T
PR1005-T
Diodes Incorporated
DIODE GEN PURP 600V 1A DO41
NSB8KTHE3_B/P
NSB8KTHE3_B/P
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 8A TO263AB
UFS370J/TR13
UFS370J/TR13
Microchip Technology
DIODE GEN PURP 700V 3A DO214AB
18TQ035
18TQ035
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 35V 18A TO220AC
GI818HE3/54
GI818HE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AC
HER201-TP
HER201-TP
Micro Commercial Co
DIODE GPP HE 2A DO-15
RFUH10NS4STL
RFUH10NS4STL
Rohm Semiconductor
DIODE GEN PURP 430V 10A LPDS

Related Product By Brand

3.0SMCJ10CA-13
3.0SMCJ10CA-13
Diodes Incorporated
TRANSIENT VOLTAGE SUPPRESSOR SMC
FN2500108
FN2500108
Diodes Incorporated
CLOCK SAW OSCILLATOR SEAM7050 T&
FN5400003
FN5400003
Diodes Incorporated
CLOCK SAW OSCILLATOR SEAM7050 T&
SMAZ30-13-F
SMAZ30-13-F
Diodes Incorporated
DIODE ZENER 30V 1W SMA
DDC113TU-7-F
DDC113TU-7-F
Diodes Incorporated
TRANS 2NPN PREBIAS 0.2W SOT363
DMG2302UKQ-7
DMG2302UKQ-7
Diodes Incorporated
MOSFET N-CH 20V 2.8A SOT23 T&R 3
74LVCE1G02FZ4-7
74LVCE1G02FZ4-7
Diodes Incorporated
IC GATE NOR 1CH 2-INP DFN1410-6
AP2142MPG-13
AP2142MPG-13
Diodes Incorporated
IC PWR SWITCH P-CHAN 1:2 8MSOP
AP2213D-3.3TRE1
AP2213D-3.3TRE1
Diodes Incorporated
IC REG LINEAR 3.3V 500MA TO252-2
AP7340-32FS4-7
AP7340-32FS4-7
Diodes Incorporated
IC REG LINEAR 3.2V 150MA 4DFN
ZSR300CSTOB
ZSR300CSTOB
Diodes Incorporated
IC REG LINEAR 3V 200MA TO92-3
AP1086DL-13
AP1086DL-13
Diodes Incorporated
IC REG LIN POS ADJ 1.5A TO252-3