PR2001G-T
  • Share:

Diodes Incorporated PR2001G-T

Manufacturer No:
PR2001G-T
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
PR2001G-T Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 50V 2A DO15
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):50 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:1.3 V @ 2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):150 ns
Current - Reverse Leakage @ Vr:5 µA @ 50 V
Capacitance @ Vr, F:35pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AC, DO-15, Axial
Supplier Device Package:DO-15
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

-
472

Please send RFQ , we will respond immediately.

Similar Products

Part Number PR2001G-T PR2005G-T   PR2002G-T   PR2003G-T   PR2004G-T   PR2006G-T   PR2007G-T   PR3001G-T   PR1001G-T   PR2001-T  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Active Obsolete
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 50 V 600 V 100 V 200 V 400 V 800 V 1000 V 50 V 50 V 50 V
Current - Average Rectified (Io) 2A 2A 2A 2A 2A 2A 2A 3A 1A 2A
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 2 A 1.3 V @ 2 A 1.3 V @ 2 A 1.3 V @ 2 A 1.3 V @ 2 A 1.3 V @ 2 A 1.3 V @ 2 A 1.3 V @ 3 A 1.3 V @ 1 A 1.2 V @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 150 ns 250 ns 150 ns 150 ns 150 ns 500 ns 500 ns 150 ns 150 ns 150 ns
Current - Reverse Leakage @ Vr 5 µA @ 50 V 5 µA @ 600 V 5 µA @ 100 V 5 µA @ 200 V 5 µA @ 400 V 5 µA @ 800 V 5 µA @ 1000 V 5 µA @ 50 V 5 µA @ 50 V 5 µA @ 50 V
Capacitance @ Vr, F 35pF @ 4V, 1MHz 35pF @ 4V, 1MHz 35pF @ 4V, 1MHz 35pF @ 4V, 1MHz 35pF @ 4V, 1MHz 35pF @ 4V, 1MHz 35pF @ 4V, 1MHz 50pF @ 4V, 1MHz 15pF @ 4V, 1MHz 35pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AC, DO-15, Axial DO-204AC, DO-15, Axial DO-204AC, DO-15, Axial DO-204AC, DO-15, Axial DO-204AC, DO-15, Axial DO-204AC, DO-15, Axial DO-204AC, DO-15, Axial DO-201AD, Axial DO-204AL, DO-41, Axial DO-204AC, DO-15, Axial
Supplier Device Package DO-15 DO-15 DO-15 DO-15 DO-15 DO-15 DO-15 DO-201AD DO-41 DO-15
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C

Related Product By Categories

SS110LW
SS110LW
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 1A SOD123W
STTH30ST06WY
STTH30ST06WY
STMicroelectronics
DIODE GEN PURP 600V 30A DO247
MB38_R1_00001
MB38_R1_00001
Panjit International Inc.
SURFACE MOUNT SCHOTTKY BARRIER R
BAT42W-E3-18
BAT42W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
NTE6035
NTE6035
NTE Electronics, Inc
R-400 PRV 60A ANODE CASE
1N4935G-T
1N4935G-T
Diodes Incorporated
DIODE GEN PURP 200V 1A DO41
GP08D-E3/54
GP08D-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 800MA DO204
1N4937-E3/73
1N4937-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
1N645-1E3/TR
1N645-1E3/TR
Microchip Technology
SIGNAL/COMPUTER DIODE
MR501
MR501
Solid State Inc.
STANDARD RECOVERY 3 AMP RECTIFIE
IDW16G65C5FKSA1
IDW16G65C5FKSA1
Infineon Technologies
DIODE SCHOTTKY 650V 16A TO247-3
EGP10D-E3/53
EGP10D-E3/53
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AL

Related Product By Brand

FL1100001
FL1100001
Diodes Incorporated
CRYSTAL 11.0592MHZ 18PF SMD
FL2500105
FL2500105
Diodes Incorporated
CRYSTAL 25.0000MHZ 12PF SMD
FL4000137
FL4000137
Diodes Incorporated
CRYSTAL SURFACE MOUNT
KK3270048
KK3270048
Diodes Incorporated
XTAL OSC XO 32.7680 KHZ CMOS SMD
RDBF252-13
RDBF252-13
Diodes Incorporated
BRIDGE RECTIFIER DBF T&R 3K
S3D-13
S3D-13
Diodes Incorporated
DIODE GEN PURP 200V 3A SMC
BZT52C18-13
BZT52C18-13
Diodes Incorporated
DIODE ZENER 18V 500MW SOD123
ZVN2110ASTOA
ZVN2110ASTOA
Diodes Incorporated
MOSFET N-CH 100V 320MA E-LINE
ZVN4525GTC
ZVN4525GTC
Diodes Incorporated
MOSFET N-CH 250V 310MA SOT223
PI5C3245Q
PI5C3245Q
Diodes Incorporated
IC BUS SWITCH 8 X 1:1 20QSOP
74LVC1T45FZ4-7
74LVC1T45FZ4-7
Diodes Incorporated
IC TRNSLTR BIDIR X2DFN1410-6
AH3763Q-P-B
AH3763Q-P-B
Diodes Incorporated
MAGNETIC SWITCH LATCH 3SIP