PR2001G-T
  • Share:

Diodes Incorporated PR2001G-T

Manufacturer No:
PR2001G-T
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
PR2001G-T Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 50V 2A DO15
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):50 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:1.3 V @ 2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):150 ns
Current - Reverse Leakage @ Vr:5 µA @ 50 V
Capacitance @ Vr, F:35pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AC, DO-15, Axial
Supplier Device Package:DO-15
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

-
472

Please send RFQ , we will respond immediately.

Similar Products

Part Number PR2001G-T PR2005G-T   PR2002G-T   PR2003G-T   PR2004G-T   PR2006G-T   PR2007G-T   PR3001G-T   PR1001G-T   PR2001-T  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Active Obsolete
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 50 V 600 V 100 V 200 V 400 V 800 V 1000 V 50 V 50 V 50 V
Current - Average Rectified (Io) 2A 2A 2A 2A 2A 2A 2A 3A 1A 2A
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 2 A 1.3 V @ 2 A 1.3 V @ 2 A 1.3 V @ 2 A 1.3 V @ 2 A 1.3 V @ 2 A 1.3 V @ 2 A 1.3 V @ 3 A 1.3 V @ 1 A 1.2 V @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 150 ns 250 ns 150 ns 150 ns 150 ns 500 ns 500 ns 150 ns 150 ns 150 ns
Current - Reverse Leakage @ Vr 5 µA @ 50 V 5 µA @ 600 V 5 µA @ 100 V 5 µA @ 200 V 5 µA @ 400 V 5 µA @ 800 V 5 µA @ 1000 V 5 µA @ 50 V 5 µA @ 50 V 5 µA @ 50 V
Capacitance @ Vr, F 35pF @ 4V, 1MHz 35pF @ 4V, 1MHz 35pF @ 4V, 1MHz 35pF @ 4V, 1MHz 35pF @ 4V, 1MHz 35pF @ 4V, 1MHz 35pF @ 4V, 1MHz 50pF @ 4V, 1MHz 15pF @ 4V, 1MHz 35pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AC, DO-15, Axial DO-204AC, DO-15, Axial DO-204AC, DO-15, Axial DO-204AC, DO-15, Axial DO-204AC, DO-15, Axial DO-204AC, DO-15, Axial DO-204AC, DO-15, Axial DO-201AD, Axial DO-204AL, DO-41, Axial DO-204AC, DO-15, Axial
Supplier Device Package DO-15 DO-15 DO-15 DO-15 DO-15 DO-15 DO-15 DO-201AD DO-41 DO-15
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C

Related Product By Categories

MEO550-02DA
MEO550-02DA
IXYS
DIODE GEN PURP 200V 582A Y4-M6
BAS21E6327HTSA1
BAS21E6327HTSA1
Infineon Technologies
DIODE GP 200V 250MA SOT23-3
STTH112UFY
STTH112UFY
STMicroelectronics
DIODE GEN PURP 1.2KV 1A SMB
MBR18AFC_R1_00001
MBR18AFC_R1_00001
Panjit International Inc.
SURFACE MOUNT SCHOTTKY BARRIER R
VSSAF3N50-M3/6B
VSSAF3N50-M3/6B
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 2.7A DO221AC
AR1PJHM3/84A
AR1PJHM3/84A
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 600V 1A DO220AA
SS3P3LHM3_A/I
SS3P3LHM3_A/I
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 3A TO277A
UGF8BTHE3_A/P
UGF8BTHE3_A/P
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 8A ITO220AC
CRS08(TE85L)
CRS08(TE85L)
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 1.5A SFLAT
MBR730
MBR730
Diodes Incorporated
DIODE SCHOTTKY 30V 7.5A TO220AC
S1MLHMHG
S1MLHMHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 1000V 1A SUB SMA
1N4937GHB0G
1N4937GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL

Related Product By Brand

FW2400063Q
FW2400063Q
Diodes Incorporated
CRYSTAL 24.0000MHZ 18PF SMD
FK1840007J
FK1840007J
Diodes Incorporated
CLOCK SAW OSCILLATOR SEAM3225 T&
FNC700004
FNC700004
Diodes Incorporated
XTAL OSC XO 127.0000MHZ CMOS SMD
SBR10U300CTFP
SBR10U300CTFP
Diodes Incorporated
DIODE ARRAY SBR 300V 5A ITO220AB
DDZ15S-7
DDZ15S-7
Diodes Incorporated
DIODE ZENER 15V 200MW SOD323
BZT585B15TQ-7
BZT585B15TQ-7
Diodes Incorporated
DIODE ZENER 15V 350MW SOD523
MMSZ5239BQ-7-F
MMSZ5239BQ-7-F
Diodes Incorporated
ZENER DIODE SOD123 T&R 3K
DMP2305U-7
DMP2305U-7
Diodes Incorporated
MOSFET P-CH 20V 4.2A SOT23-3
AL9902FDF-13
AL9902FDF-13
Diodes Incorporated
IC LED DRVR OFFL PWM 400MA 12DFN
AP1701EWG-7
AP1701EWG-7
Diodes Incorporated
IC MPU RESET CIRC 2.93V SC59-3
AP7361EA-18E-13
AP7361EA-18E-13
Diodes Incorporated
LDO CMOS HICURR SOT223 T&R 2.5K
ATS177-PG-A-A
ATS177-PG-A-A
Diodes Incorporated
MAGNETIC SWITCH LATCH 3SIP