PR1005-T
  • Share:

Diodes Incorporated PR1005-T

Manufacturer No:
PR1005-T
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
PR1005-T Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 600V 1A DO41
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.2 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):250 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-41
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

$0.04
15,768

Please send RFQ , we will respond immediately.

Similar Products

Part Number PR1005-T PR1005G-T   PR1005L-T   PR1505-T   PR2005-T   PR3005-T   PR6005-T   PR1001-T   PR1002-T   PR1003-T   PR1004-T  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Obsolete Obsolete Obsolete Obsolete Obsolete Active Obsolete Obsolete Active
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V 600 V 600 V 600 V 50 V 100 V 200 V 400 V
Current - Average Rectified (Io) 1A 1A 1A 1.5A 2A 3A 6A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 1 A 1.3 V @ 1 A 1.2 V @ 1 A 1.2 V @ 1.5 A 1.2 V @ 2 A 1.2 V @ 3 A 1.2 V @ 6 A 1.2 V @ 1 A 1.2 V @ 1 A 1.2 V @ 1 A 1.2 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 250 ns 250 ns 250 ns 250 ns 250 ns 250 ns 250 ns 150 ns 150 ns 150 ns 150 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 600 V 10 µA @ 600 V 5 µA @ 50 V 5 µA @ 100 V 5 µA @ 200 V 5 µA @ 400 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz - 15pF @ 4V, 1MHz 50pF @ 4V, 1MHz 70pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AC, DO-15, Axial DO-204AC, DO-15, Axial DO-201AD, Axial R-6, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-41 DO-41 DO-41 DO-15 DO-15 DO-201AD R-6 DO-41 DO-41 DO-41 DO-41
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C

Related Product By Categories

MS110-AU_R1_000A1
MS110-AU_R1_000A1
Panjit International Inc.
SMA, SKY
STPS1L30U
STPS1L30U
STMicroelectronics
DIODE SCHOTTKY 30V 1A SMB
UF4005
UF4005
NTE Electronics, Inc
R-600V 1A ULTRA FAST
1N4004-E3/54
1N4004-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
RUR3090
RUR3090
Harris Corporation
RECTIFIER DIODE, 30A, 900V
NTE5832
NTE5832
NTE Electronics, Inc
R-100 PRV 3A CATH CASE
ES15JLWH
ES15JLWH
Taiwan Semiconductor Corporation
DIODE, SUPER FAST
IDD10SG60CXTMA2
IDD10SG60CXTMA2
Infineon Technologies
DIODE SCHOTTKY 600V 10A TO252-3
JAN1N4249/TR
JAN1N4249/TR
Microchip Technology
RECTIFIER UFR,FRR
SS520-F1-3000
SS520-F1-3000
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 200V 5A DO214AB
BYV79E-200,127
BYV79E-200,127
WeEn Semiconductors
DIODE GEN PURP 200V 14A TO220AC
MURS320HE3/9AT
MURS320HE3/9AT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 3A DO214AB

Related Product By Brand

FL1200023
FL1200023
Diodes Incorporated
CRYSTAL SURFACE MOUNT
FL1600189Q
FL1600189Q
Diodes Incorporated
CRYSTAL 16.0000MHZ 8PF SMD
S5KC-13-F
S5KC-13-F
Diodes Incorporated
DIODE GEN PURP 800V 5A SMC
DZ23C11-7
DZ23C11-7
Diodes Incorporated
DIODE ZENER ARRAY 11V SOT23-3
DDZ9707Q-13
DDZ9707Q-13
Diodes Incorporated
DIODE ZENER 20V 500MW SOD123
PI3G612ZHE
PI3G612ZHE
Diodes Incorporated
IC MUX/DEMUX 6CH 1:2 28TQFN
AP2553FDC-7R
AP2553FDC-7R
Diodes Incorporated
IC PWR SWITCH P-CHAN 1:1 6UDFN
ZXMS6005DT8QTA
ZXMS6005DT8QTA
Diodes Incorporated
LOW SIDE INTELLIFET SM-8 T&R 1K
ZNBG3000Q16TC
ZNBG3000Q16TC
Diodes Incorporated
IC GENERATOR 3BIAS 2.2V 16-QSOP
APX809S05-29SA-7
APX809S05-29SA-7
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL SOT23
AP7217C-13SPG-13
AP7217C-13SPG-13
Diodes Incorporated
IC REG LINEAR 1.25V 600MA 8SO
AP2115M-1.2TRG1
AP2115M-1.2TRG1
Diodes Incorporated
IC REG LINEAR 1.2V 1A 8SOIC