Diodes Incorporated-MMDT3946FL3-7 - Transistors - Bipolar (BJT) - Arrays Product Specifications and Latest Quotes

Transistor Type:	NPN, PNP Complementary
Current - Collector (Ic) (Max):	200mA
Voltage - Collector Emitter Breakdown (Max):	40V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	50nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 10mA, 1V
Power - Max:	370mW
Frequency - Transition:	300MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-XFDFN Exposed Pad
Supplier Device Package:	X2-DFN1310-6 (Type B)

Diodes Incorporated MMDT3946FL3-7