Diodes Incorporated-MMBTH24-7-F - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	40V
Frequency - Transition:	400MHz
Noise Figure (dB Typ @ f):	-
Gain:	-
Power - Max:	300mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 8mA, 10V
Current - Collector (Ic) (Max):	50mA
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3

Diodes Incorporated MMBTH24-7-F