Diodes Incorporated-MMBT5551-7-F - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	600 mA
Voltage - Collector Emitter Breakdown (Max):	160 V
Vce Saturation (Max) @ Ib, Ic:	200mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 10mA, 5V
Power - Max:	300 mW
Frequency - Transition:	300MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3

Diodes Incorporated MMBT5551-7-F