Diodes Incorporated-MIMD10A-7-F - Transistors - Bipolar (BJT) - Arrays, Pre-Biased Product Specifications and Latest Quotes

Transistor Type:	1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA, 500mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	100Ohms, 10kOhms
Resistor - Emitter Base (R2):	10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 1mA, 10mA / 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	250MHz, 200MHz
Power - Max:	200mW
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	SOT-363

Diodes Incorporated MIMD10A-7-F