MBR5H150VPC-E1
  • Share:

Diodes Incorporated MBR5H150VPC-E1

Manufacturer No:
MBR5H150VPC-E1
Manufacturer:
Diodes Incorporated
Package:
Bulk
Datasheet:
MBR5H150VPC-E1 Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 150V 5A DO27
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):150 V
Current - Average Rectified (Io):5A
Voltage - Forward (Vf) (Max) @ If:920 mV @ 5 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:8 µA @ 150 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-201AA, DO-27, Axial
Supplier Device Package:DO-201
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

-
247

Please send RFQ , we will respond immediately.

Similar Products

Part Number MBR5H150VPC-E1 MBR5H150VP-E1   MBR5H150VPA-E1   MBR5H150VPB-E1  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete Obsolete Obsolete
Diode Type Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 150 V 150 V 150 V 150 V
Current - Average Rectified (Io) 5A 5A 5A 5A
Voltage - Forward (Vf) (Max) @ If 920 mV @ 5 A 920 mV @ 5 A 920 mV @ 5 A 920 mV @ 5 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - -
Current - Reverse Leakage @ Vr 8 µA @ 150 V 8 µA @ 150 V 8 µA @ 150 V 8 µA @ 150 V
Capacitance @ Vr, F - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case DO-201AA, DO-27, Axial DO-201AA, DO-27, Axial DO-201AA, DO-27, Axial DO-201AA, DO-27, Axial
Supplier Device Package DO-201 DO-201 DO-201 DO-201
Operating Temperature - Junction 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max)

Related Product By Categories

US1MFA
US1MFA
onsemi
DIODE GEN PURP 1KV 1A SOD123FA
RHRP8120
RHRP8120
onsemi
DIODE GEN PURP 1200V 8A TO220-2L
NSR0520V2T1G
NSR0520V2T1G
onsemi
DIODE SCHOTTKY 20V 500MA SOD523
MBRM140T3G
MBRM140T3G
onsemi
DIODE SCHOTTKY 40V 1A POWERMITE
AS4PD-M3/87A
AS4PD-M3/87A
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 200V 2.4A TO277A
JANS1N5310UR-1/TR
JANS1N5310UR-1/TR
Microchip Technology
CURRENT REGULATOR
40EPS12
40EPS12
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.2KV 40A TO247AC
1N5059GPHE3/54
1N5059GPHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AC
RSFALHMTG
RSFALHMTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 500MA SUB SMA
MBRF2045HC0G
MBRF2045HC0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 45V 20A ITO220AC
D251K18BB01XPSA1
D251K18BB01XPSA1
Infineon Technologies
STD THYR DIODEN DISC
RB400VYM-50FHTR
RB400VYM-50FHTR
Rohm Semiconductor
SCHOTTKY BARRIER DIODE (AEC-Q101

Related Product By Brand

SMAJ10CAQ-13-F
SMAJ10CAQ-13-F
Diodes Incorporated
TRANSIENT VOLTAGE SUPPRESSOR SMA
FL2400040
FL2400040
Diodes Incorporated
CRYSTAL 24.0000MHZ 20PF SMD
FJ2400012
FJ2400012
Diodes Incorporated
XTAL OSC XO 24.0000MHZ CMOS SMD
RDBF36-13
RDBF36-13
Diodes Incorporated
BRIDGE RECTIFIER DBF T&R 3K
ZXMC10A816N8TC
ZXMC10A816N8TC
Diodes Incorporated
MOSFET N/P-CH 100V 2A 8-SOIC
BSS8402DWQ-7
BSS8402DWQ-7
Diodes Incorporated
MOSFET N/P-CH 60V/50V
ZVN2110GTA
ZVN2110GTA
Diodes Incorporated
MOSFET N-CH 100V 500MA SOT223
AZV5002DS-7
AZV5002DS-7
Diodes Incorporated
IC DETECTION SWITCH U-QFN1418-10
PI74FCT162245ATVEX
PI74FCT162245ATVEX
Diodes Incorporated
IC TXRX NON-INVERT 5.5V 48SSOP
PS8A0004WEX
PS8A0004WEX
Diodes Incorporated
HEATER CONTROLLER SO-8
AS7805AT-E1
AS7805AT-E1
Diodes Incorporated
IC REG LINEAR 5V 1A TO220-3
AH266K-PG-B-B
AH266K-PG-B-B
Diodes Incorporated
MAGNETIC SWITCH LATCH 4SIP