MBR3100VPTR-G1
  • Share:

Diodes Incorporated MBR3100VPTR-G1

Manufacturer No:
MBR3100VPTR-G1
Manufacturer:
Diodes Incorporated
Package:
Tape & Box (TB)
Datasheet:
MBR3100VPTR-G1 Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 100V 3A DO27
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:850 mV @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:500 µA @ 100 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-201AA, DO-27, Axial
Supplier Device Package:DO-27
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

-
314

Please send RFQ , we will respond immediately.

Similar Products

Part Number MBR3100VPTR-G1 MBR3100VRTR-G1   MBR3100VPTR-E1  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete Obsolete
Diode Type Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 100 V
Current - Average Rectified (Io) 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 850 mV @ 3 A 850 mV @ 3 A 850 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - -
Current - Reverse Leakage @ Vr 500 µA @ 100 V 500 µA @ 100 V 500 µA @ 100 V
Capacitance @ Vr, F - - -
Mounting Type Through Hole Surface Mount Through Hole
Package / Case DO-201AA, DO-27, Axial DO-214AC, SMA DO-201AA, DO-27, Axial
Supplier Device Package DO-27 DO-214AC DO-201
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C

Related Product By Categories

S1JMHRSG
S1JMHRSG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A MICRO SMA
PG4001_R2_00001
PG4001_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION RECTIF
VS-C16ET07T-M3
VS-C16ET07T-M3
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 650V 8A TO220AC
EGP20G
EGP20G
Fairchild Semiconductor
RECTIFIER DIODE, 2A, 400V, DO-15
PMEG4005CEJX
PMEG4005CEJX
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SC90
BAR65-02VH6327
BAR65-02VH6327
Infineon Technologies
PIN DIODE
6A01B-G
6A01B-G
Comchip Technology
DIODE GEN PURP 100V 6A R6
GP10GHE3/73
GP10GHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
CR3F-060 TR
CR3F-060 TR
Central Semiconductor Corp
DIODE GEN PURP 600V 3A DO201AD
SFA805GHC0G
SFA805GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 8A TO220AC
FR153G B0G
FR153G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1.5A DO204AC
SR206 B0G
SR206 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 2A DO204AC

Related Product By Brand

D1213A-02SM-7
D1213A-02SM-7
Diodes Incorporated
TVS DIODE 3.3VWM 10VC SOT25
SMAJ8.0A-13-F
SMAJ8.0A-13-F
Diodes Incorporated
TVS DIODE 8VWM 13.6VC SMA
F91200091
F91200091
Diodes Incorporated
CRYSTAL 12.0000MHZ 18PF
BAS7004TA
BAS7004TA
Diodes Incorporated
DIODE SCHOTTKY DUAL SOT23-3
BAS40LP-7
BAS40LP-7
Diodes Incorporated
DIODE SCHOTTKY 40V 200MA 2DFN
MMBZ5236BS-7-F
MMBZ5236BS-7-F
Diodes Incorporated
DIODE ZENER ARRAY 7.5V SOT363
BZT585B8V2T-7
BZT585B8V2T-7
Diodes Incorporated
DIODE ZENER 8.2V 350MW SOD523
DMP3098LQ-7
DMP3098LQ-7
Diodes Incorporated
MOSFET P-CH 30V 3.8A SOT23-3
DMNH6021SK3Q-13
DMNH6021SK3Q-13
Diodes Incorporated
MOSFET N-CH 60V 50A TO252-2
74AUP2G34FZ4-7
74AUP2G34FZ4-7
Diodes Incorporated
IC BUFFER NON-INVERT 3.6V 6DFN
APX810S-46SR-7
APX810S-46SR-7
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL SOT23
AP2210N-5.0TRG1
AP2210N-5.0TRG1
Diodes Incorporated
IC REG LINEAR 5V 300MA SOT23-3