Diodes Incorporated-LBN150B01-7 - Transistors - Bipolar (BJT) - Arrays Product Specifications and Latest Quotes

Transistor Type:	NPN, PNP
Current - Collector (Ic) (Max):	200mA
Voltage - Collector Emitter Breakdown (Max):	40V
Vce Saturation (Max) @ Ib, Ic:	360mV @ 20mA, 200mA, 500mV @ 20mA, 200mA
Current - Collector Cutoff (Max):	50nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 100mA, 1V / 32 @ 100mA, 1V
Power - Max:	300mW
Frequency - Transition:	250MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-23-6
Supplier Device Package:	SOT-26

Diodes Incorporated LBN150B01-7