Diodes Incorporated-HTMN5130SSD-13 - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	2 N-Channel (Dual)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	55V
Current - Continuous Drain (Id) @ 25°C:	2.6A
Rds On (Max) @ Id, Vgs:	130mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	8.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	218.7pF @ 25V
Power - Max:	1.7W
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO

Diodes Incorporated HTMN5130SSD-13