HBDM60V600W-7
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Diodes Incorporated HBDM60V600W-7

Manufacturer No:
HBDM60V600W-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
HBDM60V600W-7 Datasheet
ECAD Model:
-
Description:
TRANS NPN/PNP 65V/60V SOT363
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:NPN, PNP
Current - Collector (Ic) (Max):500mA, 600mA
Voltage - Collector Emitter Breakdown (Max):65V, 60V
Vce Saturation (Max) @ Ib, Ic:400mV @ 10mA, 100mA, 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 1V / 100 @ 150mA, 10V
Power - Max:200mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SOT-363
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Similar Products

Part Number HBDM60V600W-7 HBDM60V600X-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Obsolete Active
Transistor Type NPN, PNP 1 NPN, 1 PNP (H-Bridge)
Current - Collector (Ic) (Max) 500mA, 600mA 600mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 65V, 60V 60V, 80V
Vce Saturation (Max) @ Ib, Ic 400mV @ 10mA, 100mA, 500mV @ 50mA, 500mA 400mV @ 10mA, 100mA, 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA 100nA, 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 1V / 100 @ 150mA, 10V 250 @ 10mA, 1V / 100 @ 150mA, 10V
Power - Max 200mW 200mW
Frequency - Transition 100MHz -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C
Mounting Type Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363 SOT-363

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