GBJ810
  • Share:

Diodes Incorporated GBJ810

Manufacturer No:
GBJ810
Manufacturer:
Diodes Incorporated
Package:
Tube
Datasheet:
GBJ810 Datasheet
ECAD Model:
-
Description:
BRIDGE RECT 1PHASE 1KV 8A GBJ
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Single Phase
Technology:Standard
Voltage - Peak Reverse (Max):1 kV
Current - Average Rectified (Io):8 A
Voltage - Forward (Vf) (Max) @ If:1 V @ 4 A
Current - Reverse Leakage @ Vr:5 µA @ 1000 V
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:4-SIP, GBJ
Supplier Device Package:GBJ
0 Remaining View Similar

In Stock

-
146

Please send RFQ , we will respond immediately.

Similar Products

Part Number GBJ810 GBJ610  
Manufacturer Diodes Incorporated SMC Diode Solutions
Product Status Discontinued at Digi-Key Active
Diode Type Single Phase Single Phase
Technology Standard Standard
Voltage - Peak Reverse (Max) 1 kV 1 kV
Current - Average Rectified (Io) 8 A 6 A
Voltage - Forward (Vf) (Max) @ If 1 V @ 4 A 1.1 V @ 6 A
Current - Reverse Leakage @ Vr 5 µA @ 1000 V 5 µA @ 1000 V
Operating Temperature -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case 4-SIP, GBJ 4-ESIP
Supplier Device Package GBJ GBJ

Related Product By Categories

GSIB660-E3/45
GSIB660-E3/45
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1P 600V 2.8A GSIB-5S
NTE53016
NTE53016
NTE Electronics, Inc
R-BRIDGE 200V 50A
TS25P05G
TS25P05G
Taiwan Semiconductor Corporation
BRIDGE RECT 1P 600V 25A TS-6P
GBU4D-E3/45
GBU4D-E3/45
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 200V 3A GBU
BR-104
BR-104
TubeDepot
10A / 400V BRIDGE RECTIFIER
B40C800G-E4/51
B40C800G-E4/51
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 65V 900MA WOG
VS-2KBP08
VS-2KBP08
Vishay General Semiconductor - Diodes Division
RECTIFIER BRIDGE 800V 2.0A D-44
UMB2F
UMB2F
Rectron USA
BRIDGE RCT GLASS 200V .5A SOF2-4
MP258
MP258
Rectron USA
BRIDGE RECT GLASS 800V 25A MP-25
ABF6U
ABF6U
SMC Diode Solutions
BRIDGE RECT 1PHASE 600V 1A ABF
GBL01HD2G
GBL01HD2G
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 100V 4A GBL
GBLA01H
GBLA01H
Taiwan Semiconductor Corporation
DIODE BRIDGE 4A 100V GBL

Related Product By Brand

FW4090001
FW4090001
Diodes Incorporated
CRYSTAL 40.9600MHZ 6PF SMD
BAV20WQ-7-F
BAV20WQ-7-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
BAT43W-7
BAT43W-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOD123
MBRD835L-T-F
MBRD835L-T-F
Diodes Incorporated
DIODE SCHOTTKY 35V 8A DPAK
DCX114EUQ-7-F
DCX114EUQ-7-F
Diodes Incorporated
PREBIAS TRANSISTOR SOT363 T&R 3K
FMMT918TC
FMMT918TC
Diodes Incorporated
RF TRANS NPN 15V 600MHZ SOT23-3
DDTC123JE-7-F
DDTC123JE-7-F
Diodes Incorporated
TRANS PREBIAS NPN 150MW SOT523
ZVN4525ZTA
ZVN4525ZTA
Diodes Incorporated
MOSFET N-CH 250V 240MA SOT89-3
DMP3026SFDF-13
DMP3026SFDF-13
Diodes Incorporated
MOSFET P-CH 30V 10.3A 6UDFN
PI3L301DAEX
PI3L301DAEX
Diodes Incorporated
IC MUX/DEMUX 2:1 8 OHM 48TSSOP
AP7312-1833FM-7
AP7312-1833FM-7
Diodes Incorporated
IC REG LINEAR 1.8V/3.3V 6DFN2018
AP7370-28Y-13
AP7370-28Y-13
Diodes Incorporated
IC REG LINEAR 2.8V 300MA SOT89-3