GBJ802
  • Share:

Diodes Incorporated GBJ802

Manufacturer No:
GBJ802
Manufacturer:
Diodes Incorporated
Package:
Tube
Datasheet:
GBJ802 Datasheet
ECAD Model:
-
Description:
BRIDGE RECT 1PHASE 200V 8A GBJ
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Single Phase
Technology:Standard
Voltage - Peak Reverse (Max):200 V
Current - Average Rectified (Io):8 A
Voltage - Forward (Vf) (Max) @ If:1 V @ 4 A
Current - Reverse Leakage @ Vr:5 µA @ 200 V
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:4-SIP, GBJ
Supplier Device Package:GBJ
0 Remaining View Similar

In Stock

-
285

Please send RFQ , we will respond immediately.

Similar Products

Part Number GBJ802 GBJ804   GBJ806   GBJ602   GBJ801  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated SMC Diode Solutions Diodes Incorporated
Product Status Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Active Active
Diode Type Single Phase Single Phase Single Phase Single Phase -
Technology Standard Standard Standard Standard -
Voltage - Peak Reverse (Max) 200 V 400 V 600 V 200 V -
Current - Average Rectified (Io) 8 A 8 A 8 A 6 A -
Voltage - Forward (Vf) (Max) @ If 1 V @ 4 A 1 V @ 4 A 1 V @ 4 A 1.1 V @ 6 A -
Current - Reverse Leakage @ Vr 5 µA @ 200 V 5 µA @ 400 V 5 µA @ 600 V 5 µA @ 200 V -
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Through Hole Through Hole Through Hole Through Hole -
Package / Case 4-SIP, GBJ 4-SIP, GBJ 4-SIP, GBJ 4-ESIP -
Supplier Device Package GBJ GBJ GBJ GBJ -

Related Product By Categories

NTE5346
NTE5346
NTE Electronics, Inc
R-SI BRIDGE 600V 80AMP
MSCDC50H701AG
MSCDC50H701AG
Microchip Technology
PM-DIODE-SIC-SBD-SP1F
GBU8A-T
GBU8A-T
Diotec Semiconductor
1PH BRIDGE GBU 50V 8A
MP5010W-BP
MP5010W-BP
Micro Commercial Co
BRIDGE RECT 1P 1KV 50A MP-50WW
B483C-2T
B483C-2T
Sensata-Crydom
BRIDGE RECT 1PHASE 600V 35A
GBU6G-E3/51
GBU6G-E3/51
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 400V 3.8A GBU
GBPC3506-A1-0000
GBPC3506-A1-0000
Yangzhou Yangjie Electronic Technology Co.,Ltd
RECT BRIDGE 600V 35A GBPC
DF1510M
DF1510M
Diodes Incorporated
BRIDGE RECT 1PHASE 1KV 1.5A DFM
3N251-E4/51
3N251-E4/51
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1P 800V 1.5A KBPM
KBP08ML-6747E4/51
KBP08ML-6747E4/51
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1P 800V 1.5A KBPM
GBL02HD2G
GBL02HD2G
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 200V 4A GBL
KBU1001G T0G
KBU1001G T0G
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 50V 10A KBU

Related Product By Brand

1.5KE24CA-T
1.5KE24CA-T
Diodes Incorporated
TVS DIODE 20.5VWM 33.2VC DO201
FL2400048
FL2400048
Diodes Incorporated
CRYSTAL 24.0000MHZ 12PF SMD
FK2450009
FK2450009
Diodes Incorporated
XTAL OSC XO 24.5760MHZ CMOS SMD
KD3270018
KD3270018
Diodes Incorporated
XTAL OSC XO 32.7680KHZ LVCMOS
SBR1U200P1-7
SBR1U200P1-7
Diodes Incorporated
DIODE SBR 200V 1A POWERDI123
FMMT620TA
FMMT620TA
Diodes Incorporated
TRANS NPN 80V 1.5A SOT23-3
BSS8402DW-7
BSS8402DW-7
Diodes Incorporated
MOSFET N/P-CH 60V/50V SC70-6
DMN5L06VK-7-79
DMN5L06VK-7-79
Diodes Incorporated
DIODE
DMG4466SSSL-13
DMG4466SSSL-13
Diodes Incorporated
MOSFET N-CH 30V 10A 8SO
AP3105VKTR-G1
AP3105VKTR-G1
Diodes Incorporated
IC OFFLINE SW FLYBACK SOT23-6
AP1186K5-18L-U
AP1186K5-18L-U
Diodes Incorporated
IC REG LINEAR 1.8V 1.5A TO263-5
AP131-30WG-7
AP131-30WG-7
Diodes Incorporated
IC REG LINEAR 3V 300MA SOT25