Diodes Incorporated-FZT857XDW - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	3.5 A
Voltage - Collector Emitter Breakdown (Max):	300 V
Vce Saturation (Max) @ Ib, Ic:	345mV @ 600mA, 3.5A
Current - Collector Cutoff (Max):	50nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 500mA, 10V
Power - Max:	1.6 W
Frequency - Transition:	80MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223-3

Diodes Incorporated FZT857XDW