Diodes Incorporated-FZT603QTA - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	FZT603QTA	FZT603TA	FZT653QTA
Manufacturer	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated
Product Status	Active	Active	Active
Transistor Type	NPN - Darlington	NPN - Darlington	NPN
Current - Collector (Ic) (Max)	2 A	2 A	2 A
Voltage - Collector Emitter Breakdown (Max)	80 V	80 V	100 V
Vce Saturation (Max) @ Ib, Ic	1.13V @ 20mA, 2A	1.13V @ 20mA, 2A	500mV @ 200mA, 2A
Current - Collector Cutoff (Max)	10µA	10µA	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	5000 @ 500mA, 5V	5000 @ 500mA, 5V	100 @ 500mA, 2V
Power - Max	1.2 W	2 W	1.2 W
Frequency - Transition	150MHz	150MHz	175MHz
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA
Supplier Device Package	SOT-223-3	SOT-223-3	SOT-223-3

Diodes Incorporated FZT603QTA

Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	2 A
Voltage - Collector Emitter Breakdown (Max):	80 V
Vce Saturation (Max) @ Ib, Ic:	1.13V @ 20mA, 2A
Current - Collector Cutoff (Max):	10µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	5000 @ 500mA, 5V
Power - Max:	1.2 W
Frequency - Transition:	150MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223-3