Diodes Incorporated-FZT591TA - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	FZT591TA	FZT593TA	FZT591TC	FZT491TA	FZT591ATA
Manufacturer	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated
Product Status	Active	Active	Obsolete	Active	Active
Transistor Type	PNP	PNP	PNP	NPN	PNP
Current - Collector (Ic) (Max)	1 A	1 A	1 A	1 A	1 A
Voltage - Collector Emitter Breakdown (Max)	60 V	100 V	60 V	60 V	40 V
Vce Saturation (Max) @ Ib, Ic	600mV @ 100mA, 1A	300mV @ 50mA, 500mA	600mV @ 100mA, 1A	500mV @ 100mA, 1A	500mV @ 100mA, 1A
Current - Collector Cutoff (Max)	100nA	100nA	100nA	100nA	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 500mA, 5V	100 @ 500mA, 5V	100 @ 500mA, 5V	100 @ 500mA, 5V	300 @ 100mA, 5V
Power - Max	2 W	2 W	2 W	2 W	2 W
Frequency - Transition	150MHz	50MHz	150MHz	150MHz	150MHz
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA
Supplier Device Package	SOT-223-3	SOT-223-3	SOT-223-3	SOT-223-3	SOT-223-3

Diodes Incorporated FZT591TA

Transistor Type:	PNP
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	60 V
Vce Saturation (Max) @ Ib, Ic:	600mV @ 100mA, 1A
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 500mA, 5V
Power - Max:	2 W
Frequency - Transition:	150MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223-3