Diodes Incorporated-FZT591AQTA - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	FZT591AQTA	FZT591ATA	FZT491AQTA
Manufacturer	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated
Product Status	Active	Active	Active
Transistor Type	PNP	PNP	NPN
Current - Collector (Ic) (Max)	1 A	1 A	1 A
Voltage - Collector Emitter Breakdown (Max)	40 V	40 V	40 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 100mA, 1A	500mV @ 100mA, 1A	500mV @ 100mA, 1A
Current - Collector Cutoff (Max)	100nA	100nA	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce	300 @ 100mA, 5V	300 @ 100mA, 5V	300 @ 500mA, 5V
Power - Max	2 W	2 W	3 W
Frequency - Transition	150MHz	150MHz	150MHz
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA
Supplier Device Package	SOT-223-3	SOT-223-3	SOT-223

Diodes Incorporated FZT591AQTA

Transistor Type:	PNP
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	40 V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 100mA, 1A
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	300 @ 100mA, 5V
Power - Max:	2 W
Frequency - Transition:	150MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223-3