Diodes Incorporated-FZT558TA - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	FZT558TA	FZT658TA	FZT758TA	FZT558TC	FZT458TA
Manufacturer	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated
Product Status	Active	Active	Active	Obsolete	Active
Transistor Type	PNP	NPN	PNP	PNP	NPN
Current - Collector (Ic) (Max)	200 mA	500 mA	500 mA	200 mA	300 mA
Voltage - Collector Emitter Breakdown (Max)	400 V	400 V	400 V	400 V	400 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 6mA, 50mA	500mV @ 10mA, 100mA	500mV @ 10mA, 100mA	500mV @ 6mA, 50mA	500mV @ 6mA, 50mA
Current - Collector Cutoff (Max)	100nA	100nA (ICBO)	100nA	100nA	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 50mA, 10V	40 @ 200mA, 10V	40 @ 200mA, 10V	100 @ 50mA, 10V	100 @ 50mA, 10V
Power - Max	2 W	2 W	2 W	2 W	2 W
Frequency - Transition	50MHz	50MHz	50MHz	50MHz	50MHz
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA
Supplier Device Package	SOT-223-3	SOT-223-3	SOT-223-3	SOT-223-3	SOT-223-3

Diodes Incorporated FZT558TA

Transistor Type:	PNP
Current - Collector (Ic) (Max):	200 mA
Voltage - Collector Emitter Breakdown (Max):	400 V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 6mA, 50mA
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 50mA, 10V
Power - Max:	2 W
Frequency - Transition:	50MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223-3