Diodes Incorporated-FMMT558QTA - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	FMMT558QTA	FMMT558TA	FMMT458QTA	FMMT555QTA
Manufacturer	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated
Product Status	Active	Active	Active	Active
Transistor Type	PNP	PNP	NPN	PNP
Current - Collector (Ic) (Max)	150 mA	150 mA	225 mA	1 A
Voltage - Collector Emitter Breakdown (Max)	400 V	400 V	400 V	150 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 6mA, 50mA	500mV @ 6mA, 50mA	500mV @ 6mA, 50mA	300mV @ 10mA, 100mA
Current - Collector Cutoff (Max)	100nA	100nA	100nA	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 50mA, 10V	100 @ 50mA, 10V	100 @ 50mA, 10V	50 @ 300mA, 10V
Power - Max	500 mW	500 mW	500 mW	500 mW
Frequency - Transition	50MHz	50MHz	50MHz	100MHz
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3	SOT-23-3	SOT-23-3	SOT-23-3

Diodes Incorporated FMMT558QTA

Transistor Type:	PNP
Current - Collector (Ic) (Max):	150 mA
Voltage - Collector Emitter Breakdown (Max):	400 V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 6mA, 50mA
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 50mA, 10V
Power - Max:	500 mW
Frequency - Transition:	50MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3