Diodes Incorporated-EMF21-7 - Transistors - Bipolar (BJT) - Arrays, Pre-Biased Product Specifications and Latest Quotes

Transistor Type:	1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max):	100mA, 500mA
Voltage - Collector Emitter Breakdown (Max):	50V, 12V
Resistor - Base (R1):	10kOhms
Resistor - Emitter Base (R2):	10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 5mA, 5V / 270 @ 10mA, 2V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	250MHz, 280MHz
Power - Max:	300mW
Mounting Type:	Surface Mount
Package / Case:	SOT-563, SOT-666
Supplier Device Package:	SOT-563

Diodes Incorporated EMF21-7