Diodes Incorporated-DXTN58100CFDB-7 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	4 A
Voltage - Collector Emitter Breakdown (Max):	100 V
Vce Saturation (Max) @ Ib, Ic:	260mV @ 400mA, 4A
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	180 @ 500mA, 2V
Power - Max:	690 mW
Frequency - Transition:	150MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	3-UDFN Exposed Pad
Supplier Device Package:	U-DFN2020-3 (Type B)

Diodes Incorporated DXTN58100CFDB-7