Diodes Incorporated-DXTN3C100PD-13 - Transistors - Bipolar (BJT) - Arrays Product Specifications and Latest Quotes

Transistor Type:	2 NPN (Dual)
Current - Collector (Ic) (Max):	3A
Voltage - Collector Emitter Breakdown (Max):	100V
Vce Saturation (Max) @ Ib, Ic:	330mV @ 300mA, 3A
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	150 @ 500mA, 10V
Power - Max:	1.47W
Frequency - Transition:	130MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-PowerTDFN
Supplier Device Package:	PowerDI5060-8 (Type UXD)

Diodes Incorporated DXTN3C100PD-13