Diodes Incorporated-DSS4220V-7 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	DSS4220V-7	DSS4240V-7	DSS5220V-7
Manufacturer	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated
Product Status	Active	Active	Active
Transistor Type	NPN	NPN	PNP
Current - Collector (Ic) (Max)	2 A	2 A	2 A
Voltage - Collector Emitter Breakdown (Max)	20 V	40 V	20 V
Vce Saturation (Max) @ Ib, Ic	350mV @ 200mA, 2A	400mV @ 200mA, 2A	390mV @ 200mA, 2A
Current - Collector Cutoff (Max)	100nA	100nA	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 1A, 2V	300 @ 500mA, 5V	155 @ 1A, 2V
Power - Max	600 mW	600 mW	600 mW
Frequency - Transition	260MHz	150MHz	150MHz
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Package / Case	SOT-563, SOT-666	SOT-563, SOT-666	SOT-563, SOT-666
Supplier Device Package	SOT-563	SOT-563	SOT-563

Diodes Incorporated DSS4220V-7

Transistor Type:	NPN
Current - Collector (Ic) (Max):	2 A
Voltage - Collector Emitter Breakdown (Max):	20 V
Vce Saturation (Max) @ Ib, Ic:	350mV @ 200mA, 2A
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 1A, 2V
Power - Max:	600 mW
Frequency - Transition:	260MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-563, SOT-666
Supplier Device Package:	SOT-563