Diodes Incorporated-DSS4160V-7 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	DSS4160V-7	DSS5160V-7	DSS4140V-7	DSS4160T-7	DSS4160U-7
Manufacturer	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated
Product Status	Active	Active	Active	Active	Active
Transistor Type	NPN	PNP	NPN	NPN	NPN
Current - Collector (Ic) (Max)	1 A	1 A	1 A	1 A	1 A
Voltage - Collector Emitter Breakdown (Max)	60 V	60 V	40 V	60 V	60 V
Vce Saturation (Max) @ Ib, Ic	250mV @ 100mA, 1A	330mV @ 100mA, 1A	440mV @ 200mA, 2A	280mV @ 100mA, 1A	280mV @ 100mA, 1A
Current - Collector Cutoff (Max)	100nA	100nA	100nA	100nA	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 500mA, 5V	150 @ 500mA, 5V	300 @ 500mA, 5V	200 @ 500mA, 5V	200 @ 500mA, 5V
Power - Max	600 mW	600 mW	600 mW	725 mW	400 mW
Frequency - Transition	150MHz	150MHz	150MHz	150MHz	150MHz
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	SOT-563, SOT-666	SOT-563, SOT-666	SOT-563, SOT-666	TO-236-3, SC-59, SOT-23-3	SC-70, SOT-323
Supplier Device Package	SOT-563	SOT-563	SOT-563	SOT-23-3	SOT-323

Diodes Incorporated DSS4160V-7

Transistor Type:	NPN
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	60 V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 100mA, 1A
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 500mA, 5V
Power - Max:	600 mW
Frequency - Transition:	150MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-563, SOT-666
Supplier Device Package:	SOT-563