Diodes Incorporated-DSS4160DS-7 - Transistors - Bipolar (BJT) - Arrays Product Specifications and Latest Quotes

Transistor Type:	2 NPN (Dual)
Current - Collector (Ic) (Max):	1A
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 100mA, 1A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 1A, 5V
Power - Max:	700mW
Frequency - Transition:	220MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-23-6
Supplier Device Package:	SOT-26

Diodes Incorporated DSS4160DS-7