Diodes Incorporated-DRDN010W-7 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN + Diode (Isolated)
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	18 V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 30mA, 300mA
Current - Collector Cutoff (Max):	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	150 @ 100mA, 1V
Power - Max:	200 mW
Frequency - Transition:	100MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	SOT-363

Diodes Incorporated DRDN010W-7