DMTH8012LK3Q-13
  • Share:

Diodes Incorporated DMTH8012LK3Q-13

Manufacturer No:
DMTH8012LK3Q-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMTH8012LK3Q-13 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 80V 50A TO252
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:16mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:46.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2051 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):2.6W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$1.21
36

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMTH8012LK3Q-13 DMTH8012LK3-13  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 12A, 10V 16mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 46.8 nC @ 10 V 34 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2051 pF @ 40 V 1949 pF @ 40 V
FET Feature - -
Power Dissipation (Max) 2.6W (Ta) 2.6W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-252-3 TO-252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

IRFBC30ASTRLPBF
IRFBC30ASTRLPBF
Vishay Siliconix
MOSFET N-CH 600V 3.6A D2PAK
IXTK120P20T
IXTK120P20T
IXYS
MOSFET P-CH 200V 120A TO264
FDS2670
FDS2670
onsemi
MOSFET N-CH 200V 3A 8SOIC
PMV100XPEA,215
PMV100XPEA,215
Nexperia USA Inc.
MOSFET P-CH 20V 2.4A TO236AB
RM40P07
RM40P07
Rectron USA
MOSFET P-CHANNEL 40V 6.2A 8SOP
FQB6N90TM_AM002
FQB6N90TM_AM002
onsemi
MOSFET N-CH 900V 5.8A D2PAK
SN7002W E6433
SN7002W E6433
Infineon Technologies
MOSFET N-CH 60V 230MA SOT323-3
NTD32N06-1G
NTD32N06-1G
onsemi
MOSFET N-CH 60V 32A IPAK
TPCC8006-H(TE12LQM
TPCC8006-H(TE12LQM
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 22A 8TSON
STU12N65M5
STU12N65M5
STMicroelectronics
MOSFET N-CH 650V 8.5A IPAK
MCH6331-TL-E
MCH6331-TL-E
onsemi
MOSFET P-CH 30V 3.5A 6MCPH
PJD25P03_L2_00001
PJD25P03_L2_00001
Panjit International Inc.
30V P-CHANNEL ENHANCEMENT MODE M

Related Product By Brand

SMCJ8.0CA-13
SMCJ8.0CA-13
Diodes Incorporated
TVS BI-DIR 8.0V 1500W SMC
FL2500261Z
FL2500261Z
Diodes Incorporated
CRYSTAL 25.0000MHZ 18PF SMD
FY3000034
FY3000034
Diodes Incorporated
CRYSTAL 30.0000MHZ 10PF SMD
FD2500095
FD2500095
Diodes Incorporated
XTAL OSC XO SMD
FN2750011
FN2750011
Diodes Incorporated
XTAL OSC XO 27.5000MHZ CMOS
SBR8U300P5-13
SBR8U300P5-13
Diodes Incorporated
DIODE SBR 300V 8A POWERDI5
MBR3100VPTR-E1
MBR3100VPTR-E1
Diodes Incorporated
DIODE SCHOTTKY 100V 3A DO27
BZX84C3V6S-7
BZX84C3V6S-7
Diodes Incorporated
DIODE ZENER ARRAY 3.6V SOT363
BZT52C4V7Q-7-F
BZT52C4V7Q-7-F
Diodes Incorporated
ZENER DIODE SOD123 T&R 3K
PI6C2510ALE
PI6C2510ALE
Diodes Incorporated
IC PLL CLOCK DVR 10OUT 24-TSSOP
DLD101-7
DLD101-7
Diodes Incorporated
IC LED DRIVER LINEAR DIM 1A 8DFN
ZSM380GTA
ZSM380GTA
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL SOT223