DMTH6016LPDQ-13
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Diodes Incorporated DMTH6016LPDQ-13

Manufacturer No:
DMTH6016LPDQ-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMTH6016LPDQ-13 Datasheet
ECAD Model:
-
Description:
MOSFET BVDSS: 41V-60V POWERDI506
Delivery:
Payment:
iso14001
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Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:9.2A (Ta), 33.2A (Tc)
Rds On (Max) @ Id, Vgs:19mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:864pF @ 30V
Power - Max:2.5W (Ta), 37.5W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN
Supplier Device Package:PowerDI5060-8
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Similar Products

Part Number DMTH6016LPDQ-13 DMTH6016LSDQ-13   DMTH6016LPD-13  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Standard Standard Standard
Drain to Source Voltage (Vdss) 60V 60V 60V
Current - Continuous Drain (Id) @ 25°C 9.2A (Ta), 33.2A (Tc) 7.6A (Ta) 9.2A (Ta), 33.2A (Tc)
Rds On (Max) @ Id, Vgs 19mOhm @ 10A, 10V 19.5mOhm @ 10A, 10V 19mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V 17nC @ 10V 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 864pF @ 30V 864pF @ 30V 864pF @ 30V
Power - Max 2.5W (Ta), 37.5W (Tc) 1.4W, 1.9W 2.5W (Ta), 37.5W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-PowerTDFN 8-SOIC (0.154", 3.90mm Width) 8-PowerTDFN
Supplier Device Package PowerDI5060-8 8-SO PowerDI5060-8

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