DMTH6016LFVWQ-13
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Diodes Incorporated DMTH6016LFVWQ-13

Manufacturer No:
DMTH6016LFVWQ-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMTH6016LFVWQ-13 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 41A POWERDI3333
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:41A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:16mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15.1 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:939 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):1.17W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Supplier Device Package:PowerDI3333-8 (SWP) Type UX
Package / Case:8-PowerVDFN
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Similar Products

Part Number DMTH6016LFVWQ-13 DMTH6016LFVW-13  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 41A (Tc) 41A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 20A, 10V 16mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15.1 nC @ 10 V 15.1 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 939 pF @ 30 V 939 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 1.17W (Ta) 1.2W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Supplier Device Package PowerDI3333-8 (SWP) Type UX PowerDI3333-8 (SWP) Type UX
Package / Case 8-PowerVDFN 8-PowerVDFN

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