DMTH6016LFDFWQ-7
  • Share:

Diodes Incorporated DMTH6016LFDFWQ-7

Manufacturer No:
DMTH6016LFDFWQ-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMTH6016LFDFWQ-7 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 9.4A 6UDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:9.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:18mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:925 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):1.06W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:U-DFN2020-6 (SWP) (Type F)
Package / Case:6-UDFN Exposed Pad
0 Remaining View Similar

In Stock

$0.34
261

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMTH6016LFDFWQ-7 DMTH6016LFDFWQ-7R   DMTH6016LFDFW-7  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 9.4A (Ta) 9.4A (Ta) 9.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 10A, 10V 18mOhm @ 10A, 10V 18mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15.3 nC @ 10 V 15.3 nC @ 10 V 15.3 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 925 pF @ 30 V 925 pF @ 30 V 925 pF @ 30 V
FET Feature - - -
Power Dissipation (Max) 1.06W (Ta) 1.06W (Ta) 1.06W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package U-DFN2020-6 (SWP) (Type F) U-DFN2020-6 (SWP) (Type F) U-DFN2020-6 (SWP) (Type F)
Package / Case 6-UDFN Exposed Pad 6-UDFN Exposed Pad 6-UDFN Exposed Pad

Related Product By Categories

TK155U65Z,RQ
TK155U65Z,RQ
Toshiba Semiconductor and Storage
DTMOS VI TOLL PD=150W F=1MHZ
TSM150P04LCS RLG
TSM150P04LCS RLG
Taiwan Semiconductor Corporation
MOSFET P-CHANNEL 40V 22A 8SOP
SIR626LDP-T1-RE3
SIR626LDP-T1-RE3
Vishay Siliconix
MOSFET N-CH 60V 45.6A/186A PPAK
NTMFS0D8N03CT1G
NTMFS0D8N03CT1G
onsemi
MOSFET, POWER, SINGLE N-CHANNEL,
IXFA76N15T2-TRL
IXFA76N15T2-TRL
IXYS
MOSFET N-CH 150V 76A TO263
IXFH50N60X
IXFH50N60X
IXYS
MOSFET N-CH 600V 50A TO247
EPC2031ENGRT
EPC2031ENGRT
EPC
GANFET NCH 60V 31A DIE
IRF9640L
IRF9640L
Vishay Siliconix
MOSFET P-CH 200V 11A I2PAK
FQPF17N08L
FQPF17N08L
onsemi
MOSFET N-CH 80V 11.2A TO220F
SPD07N60C3T
SPD07N60C3T
Infineon Technologies
MOSFET N-CH 650V 7.3A TO252-3
IXFH160N15T
IXFH160N15T
IXYS
MOSFET N-CH 150V 160A TO247AD
DMP3025LK3-13
DMP3025LK3-13
Diodes Incorporated
MOSFET P-CH 30V 10.6A TO252-3

Related Product By Brand

SMAJ5.0AQ-13-F
SMAJ5.0AQ-13-F
Diodes Incorporated
TVS DIODE 5VWM 9.2VC SMA
SMBJ160A-13
SMBJ160A-13
Diodes Incorporated
TVS DIODE 160V 259V SMB
US3200023
US3200023
Diodes Incorporated
CRYSTAL 32.0000MHZ 9PF SMD
G83270042
G83270042
Diodes Incorporated
XTAL PLASTIC SMD3215 SMD
FK1120006
FK1120006
Diodes Incorporated
CLOCK SAW OSCILLATOR SEAM3225 T&
DBF1510U-13
DBF1510U-13
Diodes Incorporated
BRIDGE RECT 1PHASE 1KV 1.5A DBF
B170-13
B170-13
Diodes Incorporated
DIODE SCHOTTKY 70V 1A SMA
ZXTP07012EFFTA
ZXTP07012EFFTA
Diodes Incorporated
TRANS PNP 12V 4A SOT23F
DDTC122TU-7
DDTC122TU-7
Diodes Incorporated
TRANS PREBIAS NPN 200MW SOT323
PI6LC48P25104LE
PI6LC48P25104LE
Diodes Incorporated
156.25MHZ LVPECL SYNTHESIZER
PI6C10810LE
PI6C10810LE
Diodes Incorporated
IC CLK BUFF 1:10 250MHZ
PI6C3421ATEX
PI6C3421ATEX
Diodes Incorporated
IC CLOCK SYNTH SOT23-6