DMTH6016LFDFWQ-13
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Diodes Incorporated DMTH6016LFDFWQ-13

Manufacturer No:
DMTH6016LFDFWQ-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMTH6016LFDFWQ-13 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 9.4A 6UDFN
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:9.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:18mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:925 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):1.06W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:U-DFN2020-6 (SWP) (Type F)
Package / Case:6-UDFN Exposed Pad
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Similar Products

Part Number DMTH6016LFDFWQ-13 DMTH6016LFDFW-13  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 9.4A (Ta) 9.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 10A, 10V 18mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15.3 nC @ 10 V 15.3 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 925 pF @ 30 V 925 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 1.06W (Ta) 1.06W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package U-DFN2020-6 (SWP) (Type F) U-DFN2020-6 (SWP) (Type F)
Package / Case 6-UDFN Exposed Pad 6-UDFN Exposed Pad

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