DMTH41M8SPSQ-13
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Diodes Incorporated DMTH41M8SPSQ-13

Manufacturer No:
DMTH41M8SPSQ-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMTH41M8SPSQ-13 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 100A PWRDI5060-8
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:79.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6968 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):3.03W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerDI5060-8 (Type K)
Package / Case:8-PowerTDFN
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Similar Products

Part Number DMTH41M8SPSQ-13 DMTH41M8SPS-13  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.8mOhm @ 30A, 10V 1.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 79.5 nC @ 10 V 79.5 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6968 pF @ 20 V 6968 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 3.03W 3.03W
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PowerDI5060-8 (Type K) PowerDI5060-8 (Type K)
Package / Case 8-PowerTDFN 8-PowerTDFN

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