DMTH4014LPSW-13
  • Share:

Diodes Incorporated DMTH4014LPSW-13

Manufacturer No:
DMTH4014LPSW-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMTH4014LPSW-13 Datasheet
ECAD Model:
-
Description:
MOSFET BVDSS: 31V~40V POWERDI506
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:43.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:14.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:750 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):4W (Ta), 46.9W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Supplier Device Package:PowerDI5060-8 (Type UX)
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$0.24
345

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMTH4014LPSW-13 DMTH4014SPSW-13   DMTH4014LPSWQ-13  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 43.5A (Tc) 43.5A (Tc) 43.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 14.5mOhm @ 20A, 10V 14.8mOhm @ 20A, 10V 14.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 4V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.2 nC @ 10 V 10.6 nC @ 10 V 11.2 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 750 pF @ 20 V 805 pF @ 20 V 750 pF @ 20 V
FET Feature - - -
Power Dissipation (Max) 4W (Ta), 46.9W (Tc) 4W (Ta), 46.9W (Tc) 4W (Ta), 46.9W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Supplier Device Package PowerDI5060-8 (Type UX) PowerDI5060-8 (Type UX) PowerDI5060-8 (Type UX)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

IXTN200N10L2
IXTN200N10L2
IXYS
MOSFET N-CH 100V 178A SOT227B
IPP147N12N3GXKSA1
IPP147N12N3GXKSA1
Infineon Technologies
MOSFET N-CH 120V 56A TO220-3
IXFP38N30X3
IXFP38N30X3
IXYS
MOSFET N-CH 300V 38A TO220
FQB5N40TM
FQB5N40TM
Fairchild Semiconductor
MOSFET N-CH 400V 4.5A D2PAK
IXTH2N300P3HV
IXTH2N300P3HV
IXYS
MOSFET N-CH 3000V 2A TO247HV
FCP11N60F
FCP11N60F
onsemi
MOSFET N-CH 600V 11A TO220-3
TK8A45DA(STA4,Q,M)
TK8A45DA(STA4,Q,M)
Toshiba Semiconductor and Storage
MOSFET N-CH 450V 7.5A TO220SIS
IRL3705ZS
IRL3705ZS
Infineon Technologies
MOSFET N-CH 55V 75A D2PAK
IRFR3708TRLPBF
IRFR3708TRLPBF
Infineon Technologies
MOSFET N-CH 30V 61A DPAK
STB12NM60N-1
STB12NM60N-1
STMicroelectronics
MOSFET N-CH 600V 10A I2PAK
IRLR3715ZCTRLP
IRLR3715ZCTRLP
Infineon Technologies
MOSFET N-CH 20V 49A DPAK
NTD4909N-1G
NTD4909N-1G
onsemi
MOSFET N-CH 30V 8.8A/41A IPAK

Related Product By Brand

GC1200020
GC1200020
Diodes Incorporated
CRYSTAL METAL CAN 49S/SMD T&R 1K
FL4800045
FL4800045
Diodes Incorporated
CRYSTAL 48.0000MHZ 10PF SMD
NX51560001
NX51560001
Diodes Incorporated
XTAL OSC XO 56.0000MHZ CMOS
BZX84B2V4-7-F
BZX84B2V4-7-F
Diodes Incorporated
DIODE ZENER 2.4V SOT23
DMC1030UFDBQ-13
DMC1030UFDBQ-13
Diodes Incorporated
MOSFET N/P-CH 12V 5.1A UDFN2020
DMTH4008LFDFWQ-7
DMTH4008LFDFWQ-7
Diodes Incorporated
MOSFET N-CH 40V 11.6A 6UDFN
PI90LV032ALEX
PI90LV032ALEX
Diodes Incorporated
IC RECEIVER 0/4 16TSSOP
AP2820FM-G1
AP2820FM-G1
Diodes Incorporated
IC PWR SWITCH N-CHAN 1:1 8SOIC
PT8A3305HPEX
PT8A3305HPEX
Diodes Incorporated
HEATER CONTROLLER DIP-8
AP7370-28W5-7
AP7370-28W5-7
Diodes Incorporated
IC REG LINEAR 2.8V 300MA SOT25
AP7361C-18ER-13
AP7361C-18ER-13
Diodes Incorporated
IC REG LINEAR 1.8V 1A SOT223R
AH3377-SA-7
AH3377-SA-7
Diodes Incorporated
MAGNETIC SWITCH UNIPOLAR SOT23-3