DMTH4008LFDFW-7
  • Share:

Diodes Incorporated DMTH4008LFDFW-7

Manufacturer No:
DMTH4008LFDFW-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMTH4008LFDFW-7 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 11.6A 6UDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:11.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:11.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1030 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):990mW (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:U-DFN2020-6 (SWP) (Type F)
Package / Case:6-UDFN Exposed Pad
0 Remaining View Similar

In Stock

$0.27
2,648

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMTH4008LFDFW-7 DMTH4008LFDFWQ-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 11.6A (Ta) 11.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 11.5mOhm @ 10A, 10V 11.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14.2 nC @ 10 V 14.2 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1030 pF @ 20 V 1030 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 990mW (Ta) 990mW (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package U-DFN2020-6 (SWP) (Type F) U-DFN2020-6 (SWP) (Type F)
Package / Case 6-UDFN Exposed Pad 6-UDFN Exposed Pad

Related Product By Categories

IXTQ40N50L2
IXTQ40N50L2
IXYS
MOSFET N-CH 500V 40A TO3P
PSMN4R5-40BS,118
PSMN4R5-40BS,118
Nexperia USA Inc.
MOSFET N-CH 40V 100A D2PAK
SPD04P10PLGBTMA1
SPD04P10PLGBTMA1
Infineon Technologies
MOSFET P-CH 100V 4.2A TO252-3
APT51F50J
APT51F50J
Microchip Technology
MOSFET N-CH 500V 51A ISOTOP
DMN24H11DSQ-7
DMN24H11DSQ-7
Diodes Incorporated
MOSFET N-CH 240V 270MA SOT23 T&R
DMP4025LSSQ-13
DMP4025LSSQ-13
Diodes Incorporated
MOSFET P-CH 40V 6A 8SO
IRFR1205TRLPBF
IRFR1205TRLPBF
Infineon Technologies
MOSFET N-CH 55V 44A DPAK
FCH099N65S3-F155
FCH099N65S3-F155
onsemi
MOSFET N-CH 650V 30A TO247-3
BUK664R4-55C,118
BUK664R4-55C,118
NXP Semiconductors
NEXPERIA BUK664R4 - N-CHANNEL T
STK38N3LLH5
STK38N3LLH5
STMicroelectronics
MOSFET N-CH 30V 38A POLARPAK
SUP70N03-09BP-E3
SUP70N03-09BP-E3
Vishay Siliconix
MOSFET N-CH 30V 70A TO220AB
IPP100N08N3GHKSA1
IPP100N08N3GHKSA1
Infineon Technologies
MOSFET N-CH 80V 70A TO220-3

Related Product By Brand

FL2500179
FL2500179
Diodes Incorporated
CRYSTAL 25.0000MHZ 16PF SMD
PD3S230HQ-7
PD3S230HQ-7
Diodes Incorporated
DIODE SCHOTTKY 30V 2A POWERDI323
SF2GDF-13
SF2GDF-13
Diodes Incorporated
SUPERFAST RECOVERY RECTIFIER D-F
HER105-T
HER105-T
Diodes Incorporated
DIODE GEN PURP 400V 1A DO41
APD360VPL-E1
APD360VPL-E1
Diodes Incorporated
DIODE SCHOTTKY 60V 3A DO27
DMP3085LSD-13
DMP3085LSD-13
Diodes Incorporated
MOSFET 2P-CH 30V 3.9A 8SO
PI6CB18601ZLAIEX
PI6CB18601ZLAIEX
Diodes Incorporated
CLOCK BUFFER W-QFN3060-40 T&R 3.
AP9211SA-AH-HAC-7
AP9211SA-AH-HAC-7
Diodes Incorporated
IC BATT PROT LI-ION 1CELL 6UDFN
AH5794-FDC-7
AH5794-FDC-7
Diodes Incorporated
IC MOTOR DRIVER ON/OFF 6UDFN
AS431IBZ-G1
AS431IBZ-G1
Diodes Incorporated
IC VREF SHUNT ADJ 1% TO92
PAM2400ACA200
PAM2400ACA200
Diodes Incorporated
IC REG BOOST 2V 400MA SOT89-3
AP7363-10D-13
AP7363-10D-13
Diodes Incorporated
IC REG LINEAR 1V 1.5A TO252-3