DMTH10H2M5STLWQ-13
  • Share:

Diodes Incorporated DMTH10H2M5STLWQ-13

Manufacturer No:
DMTH10H2M5STLWQ-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMTH10H2M5STLWQ-13 Datasheet
ECAD Model:
-
Description:
MOSFET BVDSS: 61V~100V,POWERDI10
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:215A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:124.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8450 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):5.8W (Ta), 230.8W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-363
Package / Case:6-TSSOP, SC-88, SOT-363
0 Remaining View Similar

In Stock

$4.82
61

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMTH10H2M5STLWQ-13 DMTH10H2M5STLW-13  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 215A (Tc) 215A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 2.5mOhm @ 30A, 10V 2.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 124.4 nC @ 10 V 124.4 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 8450 pF @ 50 V 8450 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 5.8W (Ta), 230.8W (Tc) 5.8W (Ta), 230.8W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-363 POWERDI1012-8
Package / Case 6-TSSOP, SC-88, SOT-363 8-PowerSFN

Related Product By Categories

IRFB4410PBF
IRFB4410PBF
Infineon Technologies
MOSFET N-CH 100V 88A TO220AB
TSM60NB900CP ROG
TSM60NB900CP ROG
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 600V 4A TO252
PJD30N15_L2_00001
PJD30N15_L2_00001
Panjit International Inc.
150V N-CHANNEL ENHANCEMENT MODE
RM1A5N30S3AE
RM1A5N30S3AE
Rectron USA
MOSFET N-CH 30V 1.5A/1.4A SOT323
PJD10N10_L2_00001
PJD10N10_L2_00001
Panjit International Inc.
100V N-CHANNEL MOSFET
SQD50P04-13L_T4GE3
SQD50P04-13L_T4GE3
Vishay Siliconix
P-CHANNEL 40-V (D-S) 175C MOSFET
SPI20N65C3
SPI20N65C3
Infineon Technologies
N-CHANNEL POWER MOSFET
SPB02N60S5ATMA1
SPB02N60S5ATMA1
Infineon Technologies
MOSFET N-CH 600V 1.8A TO263-3
SPP03N60S5HKSA1
SPP03N60S5HKSA1
Infineon Technologies
MOSFET N-CH 600V 3.2A TO220-3
NTP18N06LG
NTP18N06LG
onsemi
MOSFET N-CH 60V 15A TO220AB
IRFHM8337TRPBF
IRFHM8337TRPBF
Infineon Technologies
MOSFET N-CH 30V 12A 8PQFN
RSQ015N06HZGTR
RSQ015N06HZGTR
Rohm Semiconductor
MOSFET N-CH 60V 1.5A TSMT6

Related Product By Brand

FL1600057
FL1600057
Diodes Incorporated
CRYSTAL 16.0000MHZ SURFACE MOUNT
HX7125006Q
HX7125006Q
Diodes Incorporated
XTAL OSC XO 25.0000MHZ CMOS SMD
FN3270019
FN3270019
Diodes Incorporated
CLOCK SAW OSCILLATOR SEAM7050 T&
SDT40A120CTFP
SDT40A120CTFP
Diodes Incorporated
DIODE ARRAY SCHOTT 120V ITO220AB
SBR10U200CTB
SBR10U200CTB
Diodes Incorporated
DIODE ARRAY SBR 200V 5A D2PAK
SBG3030CT-T-F
SBG3030CT-T-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V D2PAK
B0530WS-7-F
B0530WS-7-F
Diodes Incorporated
DIODE SCHOTTKY 30V 500MA SOD323
SDM2U40CSP-7B
SDM2U40CSP-7B
Diodes Incorporated
DIODE SCHOTTKY 40V 2A X3-WLB1608
PR6003-T
PR6003-T
Diodes Incorporated
DIODE GEN PURP 200V 6A R6
1N5402-B
1N5402-B
Diodes Incorporated
DIODE GEN PURP 200V 3A DO201AD
MMDT4124-7-F
MMDT4124-7-F
Diodes Incorporated
TRANS 2NPN 25V 0.2A SOT363
AP3118GSTR-G1
AP3118GSTR-G1
Diodes Incorporated
ACDC SINGLE ENDED CONT SSOP-9