DMTH10H2M5STLW-13
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Diodes Incorporated DMTH10H2M5STLW-13

Manufacturer No:
DMTH10H2M5STLW-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMTH10H2M5STLW-13 Datasheet
ECAD Model:
-
Description:
MOSFET BVDSS: 61V~100V POWERDI10
Delivery:
Payment:
iso14001
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iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:215A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:124.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8450 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):5.8W (Ta), 230.8W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:POWERDI1012-8
Package / Case:8-PowerSFN
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Similar Products

Part Number DMTH10H2M5STLW-13 DMTH10H2M5STLWQ-13  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 215A (Tc) 215A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 2.5mOhm @ 30A, 10V 2.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 124.4 nC @ 10 V 124.4 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 8450 pF @ 50 V 8450 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 5.8W (Ta), 230.8W (Tc) 5.8W (Ta), 230.8W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package POWERDI1012-8 SOT-363
Package / Case 8-PowerSFN 6-TSSOP, SC-88, SOT-363

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