DMTH10H1M7STLWQ-13
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Diodes Incorporated DMTH10H1M7STLWQ-13

Manufacturer No:
DMTH10H1M7STLWQ-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMTH10H1M7STLWQ-13 Datasheet
ECAD Model:
-
Description:
MOSFET BVDSS: 61V~100V POWERDI10
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:250A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:147 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9871 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):6W (Ta), 250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:POWERDI1012-8
Package / Case:8-PowerSFN
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Similar Products

Part Number DMTH10H1M7STLWQ-13 DMTH10H1M7STLW-13  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 250A (Tc) 250A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 2mOhm @ 30A, 10V 2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 147 nC @ 10 V 147 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 9871 pF @ 50 V 9871 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 6W (Ta), 250W (Tc) 6W (Ta), 250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package POWERDI1012-8 POWERDI1012-8
Package / Case 8-PowerSFN 8-PowerSFN

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