DMTH10H010SCT
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Diodes Incorporated DMTH10H010SCT

Manufacturer No:
DMTH10H010SCT
Manufacturer:
Diodes Incorporated
Package:
Tube
Datasheet:
DMTH10H010SCT Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 100A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:100A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:9.5mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:56.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4468 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 187W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number DMTH10H010SCT DMTH10H010LCT  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 100A (Ta) 108A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 9.5mOhm @ 13A, 10V 9.5mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 56.4 nC @ 10 V 53.7 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4468 pF @ 50 V 2592 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 187W (Tc) 2.4W (Ta), 166W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3

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