DMTH10H005LCT
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Diodes Incorporated DMTH10H005LCT

Manufacturer No:
DMTH10H005LCT
Manufacturer:
Diodes Incorporated
Package:
Tube
Datasheet:
DMTH10H005LCT Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 140A TO220AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:140A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:114 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3688 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):187W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number DMTH10H005LCT DMTH10H005SCT  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 140A (Tc) 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 5mOhm @ 13A, 10V 5mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 114 nC @ 10 V 111.7 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3688 pF @ 50 V 8474 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 187W (Tc) 187W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB
Package / Case TO-220-3 TO-220-3

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