DMT8012LSS-13
  • Share:

Diodes Incorporated DMT8012LSS-13

Manufacturer No:
DMT8012LSS-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMT8012LSS-13 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 80V 9.7A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:16.5mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1949 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):1.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
0 Remaining View Similar

In Stock

$0.93
886

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMT8012LSS-13 DMT6012LSS-13  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 60 V
Current - Continuous Drain (Id) @ 25°C 9.7A (Ta) 10.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 16.5mOhm @ 12A, 10V 11mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V 22.2 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1949 pF @ 40 V 1522 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 1.5W (Ta) 1.2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

Related Product By Categories

FQP4N25
FQP4N25
Fairchild Semiconductor
MOSFET N-CH 250V 3.6A TO220-3
UPA2520T1H-T2-AT
UPA2520T1H-T2-AT
Renesas Electronics America Inc
MOSFET N-CH 30V 10A 8VSOF
IXTA1N100P
IXTA1N100P
IXYS
MOSFET N-CH 1000V 1A TO263
IXTK110N20L2
IXTK110N20L2
IXYS
MOSFET N-CH 200V 110A TO264
IPD50P04P413ATMA2
IPD50P04P413ATMA2
Infineon Technologies
MOSFET P-CH 40V 50A TO252-3
IXFK32N100Q3
IXFK32N100Q3
IXYS
MOSFET N-CH 1000V 32A TO264AA
SKP253
SKP253
Sanken
MOSFET N-CH 250V 20A TO263-3
YJQ55P02A-F1-1100HF
YJQ55P02A-F1-1100HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
P-CH MOSFET 20V 55A DFN3333-8L
IRF3205STRRPBF
IRF3205STRRPBF
Infineon Technologies
MOSFET N-CH 55V 110A D2PAK
NTD4860N-35G
NTD4860N-35G
onsemi
MOSFET N-CH 25V 10.4A/65A IPAK
BSL202SNL6327HTSA1
BSL202SNL6327HTSA1
Infineon Technologies
MOSFET N-CH 20V 7.5A TSOP-6
IRLR024ZTRPBF
IRLR024ZTRPBF
Infineon Technologies
MOSFET N-CH 55V 16A DPAK

Related Product By Brand

D14V0S1U2WS-7
D14V0S1U2WS-7
Diodes Incorporated
TVS DIODE 14VWM 26VC SOD323
FL2600156
FL2600156
Diodes Incorporated
CRYSTAL 26.0000MHZ 9PF SMD
FN1600009
FN1600009
Diodes Incorporated
CLOCK SAW OSCILLATOR SEAM7050 T&
FN3270025
FN3270025
Diodes Incorporated
XTAL OSC XO 32.7680MHZ CMOS SMD
MBR20200CT-G1
MBR20200CT-G1
Diodes Incorporated
DIODE ARRAY SCHOTTKY 200V TO220
MBR2045CTI
MBR2045CTI
Diodes Incorporated
DIODE SCHOTTKY 45V 10A TO251
DDTA144TKA-7-F
DDTA144TKA-7-F
Diodes Incorporated
TRANS PREBIAS PNP 200MW SC59-3
DMNH6065SSDQ-13
DMNH6065SSDQ-13
Diodes Incorporated
MOSFET BVDSS: 41V~60V SO-8 T&R 2
ZSD100N8TA
ZSD100N8TA
Diodes Incorporated
IC DRIVER 1/0 8SOP
PI2EQX4432DZDE
PI2EQX4432DZDE
Diodes Incorporated
IC REDRIVER PCIE 4CH 48TQFN
PAM8902AKER
PAM8902AKER
Diodes Incorporated
IC AMP CLASS D MONO 16QFN
AH173-PG-B-B
AH173-PG-B-B
Diodes Incorporated
MAGNETIC SWITCH LATCH 3SIP