DMT69M8LFV-7
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Diodes Incorporated DMT69M8LFV-7

Manufacturer No:
DMT69M8LFV-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMT69M8LFV-7 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 45A POWERDI3333
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9.5mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:33.5 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:1925 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):42W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerDI3333-8 (Type UX)
Package / Case:8-PowerVDFN
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Similar Products

Part Number DMT69M8LFV-7 DMT68M8LFV-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 45A (Tc) 54.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.5mOhm @ 13.5A, 10V 9.5mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33.5 nC @ 10 V 30 nC @ 10 V
Vgs (Max) ±16V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1925 pF @ 30 V 2078 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 42W (Tc) 2.7W (Ta), 41.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PowerDI3333-8 (Type UX) PowerDI3333-8 (Type UX)
Package / Case 8-PowerVDFN 8-PowerVDFN

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