DMT6016LSS-13
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Diodes Incorporated DMT6016LSS-13

Manufacturer No:
DMT6016LSS-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMT6016LSS-13 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 9.2A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:9.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:18mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:864 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):1.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number DMT6016LSS-13 DMT6017LSS-13   DMT6006LSS-13   DMT6010LSS-13   DMT6011LSS-13   DMT6012LSS-13   DMT6013LSS-13   DMT6015LSS-13  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 9.2A (Ta) 9.2A (Ta) 11.9A (Ta) 14A (Ta) 10.6A (Ta) 10.4A (Ta) 10A (Ta) 9.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 10A, 10V 18mOhm @ 10A, 10V 6.5mOhm @ 20A, 10V 8mOhm @ 20A, 10V 11mOhm @ 10A, 10V 11mOhm @ 10A, 10V 14.3mOhm @ 10A, 10V 16mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2V @ 250µA 2.5V @ 250µA 2V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V 17 nC @ 10 V 34.9 nC @ 10 V 41.3 nC @ 10 V 22.2 nC @ 10 V 22.2 nC @ 10 V 15 nC @ 10 V 18.9 nC @ 30 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±16V
Input Capacitance (Ciss) (Max) @ Vds 864 pF @ 30 V 864 pF @ 30 V 2162 pF @ 30 V 2090 pF @ 30 V 1072 pF @ 30 V 1522 pF @ 30 V 1081 pF @ 30 V 1103 pF @ 30 V
FET Feature - - - - - - - -
Power Dissipation (Max) 1.5W (Ta) 1.5W (Ta) 1.38W (Ta) 1.5W (Ta) 1.4W (Ta) 1.2W (Ta) 1.4W (Ta) 1.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SOP 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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