DMT6012LSS-13
  • Share:

Diodes Incorporated DMT6012LSS-13

Manufacturer No:
DMT6012LSS-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMT6012LSS-13 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 10.4A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:10.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:11mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1522 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):1.2W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
0 Remaining View Similar

In Stock

$0.17
1,391

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMT6012LSS-13 DMT6016LSS-13   DMT6017LSS-13   DMT6015LSS-13   DMT6013LSS-13   DMT8012LSS-13   DMT6010LSS-13   DMT6011LSS-13  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V 80 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 10.4A (Ta) 9.2A (Ta) 9.2A (Ta) 9.2A (Ta) 10A (Ta) 9.7A (Ta) 14A (Ta) 10.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 10A, 10V 18mOhm @ 10A, 10V 18mOhm @ 10A, 10V 16mOhm @ 10A, 10V 14.3mOhm @ 10A, 10V 16.5mOhm @ 12A, 10V 8mOhm @ 20A, 10V 11mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 3V @ 250µA 2V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22.2 nC @ 10 V 17 nC @ 10 V 17 nC @ 10 V 18.9 nC @ 30 V 15 nC @ 10 V 34 nC @ 10 V 41.3 nC @ 10 V 22.2 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±16V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1522 pF @ 30 V 864 pF @ 30 V 864 pF @ 30 V 1103 pF @ 30 V 1081 pF @ 30 V 1949 pF @ 40 V 2090 pF @ 30 V 1072 pF @ 30 V
FET Feature - - - - - - - -
Power Dissipation (Max) 1.2W (Ta) 1.5W (Ta) 1.5W (Ta) 1.5W (Ta) 1.4W (Ta) 1.5W (Ta) 1.5W (Ta) 1.4W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO 8-SO 8-SO 8-SOP 8-SO 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

Related Product By Categories

IXFH16N80P
IXFH16N80P
IXYS
MOSFET N-CH 800V 16A TO247AD
BSP317PL6327
BSP317PL6327
Infineon Technologies
P-CHANNEL MOSFET
NTE454
NTE454
NTE Electronics, Inc
MOSFET-DUAL GATE N-CH
FDN337N
FDN337N
onsemi
MOSFET N-CH 30V 2.2A SUPERSOT3
IPB025N10N3GATMA1
IPB025N10N3GATMA1
Infineon Technologies
MOSFET N-CH 100V 180A TO263-7
IPB60R055CFD7ATMA1
IPB60R055CFD7ATMA1
Infineon Technologies
MOSFET N-CH 650V 38A TO263-3-2
STD9NM50N
STD9NM50N
STMicroelectronics
MOSFET N-CH 500V 5A DPAK
IPW60R280E6FKSA1
IPW60R280E6FKSA1
Infineon Technologies
MOSFET N-CH 600V 13.8A TO247-3
CPH3448-TL-W
CPH3448-TL-W
Texas Instruments
SMALL SIGNAL FIELD-EFFECT TRANSI
SIE820DF-T1-E3
SIE820DF-T1-E3
Vishay Siliconix
MOSFET N-CH 20V 50A 10POLARPAK
BUK9209-40B,118
BUK9209-40B,118
Nexperia USA Inc.
MOSFET N-CH 40V 75A DPAK
3LP01SS-TL-E
3LP01SS-TL-E
onsemi
MOSFET P-CH 30V 100MA 3SSFP

Related Product By Brand

SMF4L33CAQ-7
SMF4L33CAQ-7
Diodes Incorporated
TRANSIENT VOLTAGE SUPPRESSOR PP
GC2500028
GC2500028
Diodes Incorporated
CRYSTAL METAL CAN 49S/SMD T&R 1K
FY2500003
FY2500003
Diodes Incorporated
CRYSTAL SURFACE MOUNT
FN1940024
FN1940024
Diodes Incorporated
CLOCK SAW OSCILLATOR SEAM7050 T&
DMJT9435-13
DMJT9435-13
Diodes Incorporated
TRANS PNP 30V 3A SOT223-3
ZXTBM322TA
ZXTBM322TA
Diodes Incorporated
TRANS NPN 20V 4.5A 3MLP/DFN
DMN3026LVTQ-13
DMN3026LVTQ-13
Diodes Incorporated
MOSFET N-CH 30V 6.6A TSOT26
DMN24H11DS-7
DMN24H11DS-7
Diodes Incorporated
MOSFET N-CH 240V 270MA SOT23 T&R
PI3EQX8904ZHEX
PI3EQX8904ZHEX
Diodes Incorporated
IC REDRIVER 4CHAN 8GBPS 42TQFN
PT8A3287WE
PT8A3287WE
Diodes Incorporated
HEATER CONTROLLER SO-8
ZRB500F02TA
ZRB500F02TA
Diodes Incorporated
IC VREF SHUNT 2% SOT23
AP130-30YRL-13
AP130-30YRL-13
Diodes Incorporated
IC REG LINEAR 3V 300MA SOT89R-3