DMT6012LPSW-13
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Diodes Incorporated DMT6012LPSW-13

Manufacturer No:
DMT6012LPSW-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMT6012LPSW-13 Datasheet
ECAD Model:
-
Description:
MOSFET BVDSS: 41V~60V POWERDI506
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:13.1A (Ta), 31.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:12mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1522 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 17.9W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Supplier Device Package:PowerDI5060-8 (Type UX)
Package / Case:8-PowerTDFN
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Similar Products

Part Number DMT6012LPSW-13 DMT6016LPSW-13  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 13.1A (Ta), 31.5A (Tc) 11.2A (Ta), 43A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 20A, 10V 16.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22.2 nC @ 10 V 17 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1522 pF @ 30 V 864 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 3.1W (Ta), 17.9W (Tc) 2.84W (Ta), 41.67W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Supplier Device Package PowerDI5060-8 (Type UX) PowerDI5060-8 (Type UX)
Package / Case 8-PowerTDFN 8-PowerTDFN

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