DMT6012LFV-7
  • Share:

Diodes Incorporated DMT6012LFV-7

Manufacturer No:
DMT6012LFV-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMT6012LFV-7 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 43.3A PWRDI3333
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:43.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:12mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1522 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):1.95W (Ta), 33.78W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerDI3333-8 (Type UX)
Package / Case:8-PowerVDFN
0 Remaining View Similar

In Stock

$0.27
3,521

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMT6012LFV-7 DMT6017LFV-7   DMT6015LFV-7  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 65 V 60 V
Current - Continuous Drain (Id) @ 25°C 43.3A (Tc) 36A (Tc) 9.5A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 20A, 10V 20mOhm @ 6A, 10V 16mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.3V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22.2 nC @ 10 V 15.3 nC @ 10 V 18.9 nC @ 10 V
Vgs (Max) ±20V ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 1522 pF @ 30 V 891 pF @ 30 V 1103 pF @ 30 V
FET Feature - - -
Power Dissipation (Max) 1.95W (Ta), 33.78W (Tc) 2.12W (Ta), 39.06W (Tc) 2.2W (Ta), 30W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerDI3333-8 (Type UX) PowerDI3333-8 (Type UX) PowerDI3333-8 (Type UX)
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

Related Product By Categories

PJA3431_R1_00001
PJA3431_R1_00001
Panjit International Inc.
30V P-CHANNEL ENHANCEMENT MODE M
IPD80P03P4L07ATMA2
IPD80P03P4L07ATMA2
Infineon Technologies
MOSFET P-CH 30V 80A TO252-31
FDS8638
FDS8638
onsemi
MOSFET N-CH 40V 18A 8SOIC
IPB107N20N3GATMA1
IPB107N20N3GATMA1
Infineon Technologies
MOSFET N-CH 200V 88A D2PAK
IAUC28N08S5L230ATMA1
IAUC28N08S5L230ATMA1
Infineon Technologies
MOSFET N-CH 80V 28A 8TDSON-33
IRF720SPBF
IRF720SPBF
Vishay Siliconix
MOSFET N-CH 400V 3.3A D2PAK
SIRS700DP-T1-RE3
SIRS700DP-T1-RE3
Vishay Siliconix
N-CHANNEL 100 V (D-S) MOSFET POW
STD15N65M5
STD15N65M5
STMicroelectronics
MOSFET N CH 650V 11A DPAK
IRL2703STRR
IRL2703STRR
Infineon Technologies
MOSFET N-CH 30V 24A D2PAK
IRF1010ZSPBF
IRF1010ZSPBF
Infineon Technologies
MOSFET N-CH 55V 75A D2PAK
APT14050JVFR
APT14050JVFR
Microsemi Corporation
MOSFET N-CH 1400V 23A ISOTOP
RS1G201ATTB1
RS1G201ATTB1
Rohm Semiconductor
MOSFET P-CH 40V 20A/78A 8HSOP

Related Product By Brand

GC0400058
GC0400058
Diodes Incorporated
CRYSTAL 4.0000MHZ 16PF SMD
FP0600035
FP0600035
Diodes Incorporated
CRYSTAL 6.0000MHZ 20PF SMD
BAV23CQ-7-F
BAV23CQ-7-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
BZX84C22-7
BZX84C22-7
Diodes Incorporated
DIODE ZENER 22V 300MW SOT23-3
PI3CH3305LEX
PI3CH3305LEX
Diodes Incorporated
IC BUS SWITCH 1 X 1:1 8TSSOP
AP9101CK6-BXTRG1
AP9101CK6-BXTRG1
Diodes Incorporated
IC BATT PROT LI-ION 1CELL SOT26
PT8A3282PEX
PT8A3282PEX
Diodes Incorporated
HEATER CONTROLLER DIP-8
APX803L-43W5-7
APX803L-43W5-7
Diodes Incorporated
RESET GENERATOR SOT25 T&R 3K
PT7M7810STEX
PT7M7810STEX
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL SOT23-3
AP1086K33L-13
AP1086K33L-13
Diodes Incorporated
IC REG LINEAR 3.3V 1.5A TO263-2
PAM3101FKF150
PAM3101FKF150
Diodes Incorporated
IC REG LINEAR 1.5V 300MA 6DFN
AH373-SA-7
AH373-SA-7
Diodes Incorporated
MAGNETIC SWITCH LATCH SOT23