DMT6012LFV-7
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Diodes Incorporated DMT6012LFV-7

Manufacturer No:
DMT6012LFV-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMT6012LFV-7 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 43.3A PWRDI3333
Delivery:
Payment:
iso14001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:43.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:12mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1522 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):1.95W (Ta), 33.78W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerDI3333-8 (Type UX)
Package / Case:8-PowerVDFN
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Similar Products

Part Number DMT6012LFV-7 DMT6017LFV-7   DMT6015LFV-7  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 65 V 60 V
Current - Continuous Drain (Id) @ 25°C 43.3A (Tc) 36A (Tc) 9.5A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 20A, 10V 20mOhm @ 6A, 10V 16mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.3V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22.2 nC @ 10 V 15.3 nC @ 10 V 18.9 nC @ 10 V
Vgs (Max) ±20V ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 1522 pF @ 30 V 891 pF @ 30 V 1103 pF @ 30 V
FET Feature - - -
Power Dissipation (Max) 1.95W (Ta), 33.78W (Tc) 2.12W (Ta), 39.06W (Tc) 2.2W (Ta), 30W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerDI3333-8 (Type UX) PowerDI3333-8 (Type UX) PowerDI3333-8 (Type UX)
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

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