DMT6009LK3-13
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Diodes Incorporated DMT6009LK3-13

Manufacturer No:
DMT6009LK3-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMT6009LK3-13 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 13.3A/57A TO252
Delivery:
Payment:
iso14001
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iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:13.3A (Ta), 57A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:10mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:33.5 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:1925 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):2.6W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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$1.04
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Similar Products

Part Number DMT6009LK3-13 DMT6006LK3-13  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 13.3A (Ta), 57A (Tc) 88A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 13.5A, 10V 6.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33.5 nC @ 10 V 34.9 nC @ 10 V
Vgs (Max) ±16V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1925 pF @ 30 V 2162 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 2.6W (Ta) 3.1W (Ta), 89.3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-252-3 TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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