DMT6009LCT
  • Share:

Diodes Incorporated DMT6009LCT

Manufacturer No:
DMT6009LCT
Manufacturer:
Diodes Incorporated
Package:
Tube
Datasheet:
DMT6009LCT Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 37.2A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:37.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:12mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:33.5 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:1925 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):2.2W (Ta), 25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$0.94
296

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMT6009LCT DMT6005LCT  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 37.2A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 13.5A, 10V 6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33.5 nC @ 10 V 47.1 nC @ 10 V
Vgs (Max) ±16V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1925 pF @ 30 V 2962 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 2.2W (Ta), 25W (Tc) 2.3W (Ta), 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3

Related Product By Categories

IRF1404LPBF
IRF1404LPBF
Infineon Technologies
MOSFET N-CH 40V 162A TO262
RJK0852DPB-00#J5
RJK0852DPB-00#J5
Renesas Electronics America Inc
MOSFET N-CH 80V 30A LFPAK
DMN2020LSN-7
DMN2020LSN-7
Diodes Incorporated
MOSFET N-CH 20V 6.9A SC59-3
SISS23DN-T1-GE3
SISS23DN-T1-GE3
Vishay Siliconix
MOSFET P-CH 20V 50A PPAK 1212-8S
RJK0391DPA-00#J5A
RJK0391DPA-00#J5A
Renesas Electronics America Inc
MOSFET N-CH 30V 50A 8WPAK
SIHP17N60D-GE3
SIHP17N60D-GE3
Vishay Siliconix
MOSFET N-CH 600V 17A TO220AB
HUFA75345S3S
HUFA75345S3S
onsemi
MOSFET N-CH 55V 75A D2PAK
STV250N55F3
STV250N55F3
STMicroelectronics
MOSFET N-CH 55V 200A 10POWERSO
IRF7413ZGTRPBF
IRF7413ZGTRPBF
Infineon Technologies
MOSFET N-CH 30V 13A 8SO
NTMFS4833NST3G
NTMFS4833NST3G
onsemi
MOSFET N-CH 30V 16A/156A SO-8FL
BUK763R9-60E,118
BUK763R9-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 100A D2PAK
AON6500_001
AON6500_001
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 71A/200A 8DFN

Related Product By Brand

SMF4L36A-7
SMF4L36A-7
Diodes Incorporated
TRANSIENT VOLTAGE SUPPRESSOR PP
FL5400047
FL5400047
Diodes Incorporated
CRYSTAL 54.0000MHZ 8PF SMD
MBR3045CT-LJ
MBR3045CT-LJ
Diodes Incorporated
DIODE ARRAY 45V 15A TO220AB
BAS70DW-04-7
BAS70DW-04-7
Diodes Incorporated
DIODE ARRAY SCHOTTKY 70V SOT363
UF2006-T
UF2006-T
Diodes Incorporated
DIODE GEN PURP 800V 2A DO15
DMN3061SVT-7
DMN3061SVT-7
Diodes Incorporated
MOSFET BVDSS: 25V-30V TSOT26
PI6LC48P21LIE
PI6LC48P21LIE
Diodes Incorporated
IC CLOCK GENERATOR LVPECL 8TSSOP
PI6C22405LIE
PI6C22405LIE
Diodes Incorporated
IC ZERO DELAY CLK BUFF 8TSSOP
PI74STX1G126CEX
PI74STX1G126CEX
Diodes Incorporated
IC BUF NON-INVERT 5.5V SC70-5
74LVC1G00FW5-7
74LVC1G00FW5-7
Diodes Incorporated
IC GATE NAND 1CH 2-INP DFN1010-6
PT8A3294WEX
PT8A3294WEX
Diodes Incorporated
HEATER CONTROLLER SO-8
AP7365-20YG-13
AP7365-20YG-13
Diodes Incorporated
IC REG LINEAR 2V 600MA SOT89-3