DMT6005LCT
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Diodes Incorporated DMT6005LCT

Manufacturer No:
DMT6005LCT
Manufacturer:
Diodes Incorporated
Package:
Tube
Datasheet:
DMT6005LCT Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 100A TO220AB
Delivery:
Payment:
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iso45001
iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:47.1 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2962 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):2.3W (Ta), 104W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number DMT6005LCT DMT6009LCT  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 37.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6mOhm @ 20A, 10V 12mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 47.1 nC @ 10 V 33.5 nC @ 10 V
Vgs (Max) ±20V ±16V
Input Capacitance (Ciss) (Max) @ Vds 2962 pF @ 30 V 1925 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 2.3W (Ta), 104W (Tc) 2.2W (Ta), 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3

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